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Beilstein Journal of Nanotechnology

A wideband cryogenic microwave low-noise amplifier

Boris I Ivanov, Dmitry I. Volkhin, Ilya L. Novikov, Dmitriy K. Pitsun, Dmitriy O. Moskalev, Ilya A. Rodionov, Evgeni V. Il’ichev, Вострецов Алексей Геннадьевич

Published Sep 30, 2020• 8 citations
Publisher

Abstract

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

DOI
10.3762/bjnano.11.131

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A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
We show an experimental study of superconducting X-mon qubit based on low noise wideband measurement setup. The setup includes wide stop-band low frequency filters with a stopband frequency up to 13 GHz, the broadband low-noise cryogenic microwave amplifier (cLNA) operating at 3.8 K. The obtained power dissipation of the cLNA is below 20 mW, the frequency operating ranges from 6 GHz to 12 GHz with a gain of 30 dB. The equivalent noise temperature of the amplifier is bellow 6 K for the presented frequency range. We demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. We show standard qubit experiments: one and two-tones qubit spectroscopy, ac-Stark shift experiments for probing and excitation power sweeps.
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
The measurement of the fast-increasing number of qubits necessitates the use of a large number of specialized cryogenic low-noise amplifiers (LNAs).). This work presents a broadband LNA designed with discrete GaAs HEMT components which operate well at ~3.6 K temperature. The dual-frequency optimum noise matching network and output matching elements of the first stage were employed to optimize the equivalent noise temperature (NT) and the input return loss in a wideband. Measurement results at 3.6 K ambient temperature show that the LNA achieved an equivalent NT of30 dB in the 3.5 GHz to 7.5 GHz band with a minimum of 5 Kelvin at ~6.5 GHz. The best visibility of ~0.891 is achieved when using the LNA to observe a superconducting transmon qubit without using a JPA.
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a 5 K equivalent noise temperature and an average gain of 40 dB. We further benchmark this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.
The connection of RSFQ circuits with commercial room temperature electronics and amplifying SFQ pulses with high data rates require cryogenic interface amplifiers. Such amplifiers should provide extremely high bandwidth, low noise and low power consumption at the same time. Various hybrid amplifiers based on commercial p-HEMT transistors in an embedded microwave design were designed and characterized. Towards the p-HEMT transistor characterization at cryogenic temperature the biasing settings according to an optimum between voltage gain and low power consumption were determined. Thus a total power consumption of 2 mW and a voltage gain of 12 dB per single stage were achieved. For a preamplifier and an amplifier concept a multiple number of these stages were implemented in a microstrip and a coplanar transmission line design with a special matched interconnect taper towards the RSFQ components. Measurements of the amplifiers, the combination of an amplifier with a RSFQ circuit at 4.2 K showed their good performances without any disturbance of the RSFQ circuit. Due to the losses between the stages a total gain of 25 dB with a four stage amplifier was achieved; pulse rates went up to 3 Gb/s. The total power consumption was in the range of 8 mW. Further increase of data rates will be achieved by improving the matching between RSFQ output stage and amplifier.
The cryogenic indium phosphide (InP) high-electron-mobility transistor (HEMT) low-noise amplifier (LNA) is used for the readout amplification of qubits at444K where cooling capabilities are limited implying that the dc power of the active circuits is an essential design constraint. In this article, the RF and noise performance of the InP HEMT under ultralow-power (ULP) operation at444K has been characterized. The small-signal and noise parameter model of the InP HEMT was extracted down to 1μ\muμW. The tradeoff between noise performance and dc power consumption was analyzed in terms of the drain current and drain voltage. A 4–6 GHz hybrid cryogenic HEMT LNA designed for qubit readout and optimized for lowest noise below111mW dc power consumption was fabricated. The measured performance of the LNA at444K attained 23.1 dB average gain and 2.0 K average noise temperature at 200μ\muμW dc power.