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International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices

Cryogenic Low Noise Amplifiers and Filters for Superconducting Qubit Readout

Boris I. Ivanov, Dmitry I. Volkhin, Ilya L. Novikov, Вострецов Алексей Геннадьевич

Published Jun 1, 2020• 1 citation
Publisher

Abstract

We show an experimental study of superconducting X-mon qubit based on low noise wideband measurement setup. The setup includes wide stop-band low frequency filters with a stopband frequency up to 13 GHz, the broadband low-noise cryogenic microwave amplifier (cLNA) operating at 3.8 K. The obtained power dissipation of the cLNA is below 20 mW, the frequency operating ranges from 6 GHz to 12 GHz with a gain of 30 dB. The equivalent noise temperature of the amplifier is bellow 6 K for the presented frequency range. We demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. We show standard qubit experiments: one and two-tones qubit spectroscopy, ac-Stark shift experiments for probing and excitation power sweeps.

DOI
10.1109/edm49804.2020.9153535

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We show an experimental study of superconducting X-mon qubit based on low noise wideband measurement setup. The setup includes wide stop-band low frequency filters with a stopband frequency up to 13 GHz, the broadband low-noise cryogenic microwave amplifier (cLNA) operating at 3.8 K. The obtained power dissipation of the cLNA is below 20 mW, the frequency operating ranges from 6 GHz to 12 GHz with a gain of 30 dB. The equivalent noise temperature of the amplifier is bellow 6 K for the presented frequency range. We demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. We show standard qubit experiments: one and two-tones qubit spectroscopy, ac-Stark shift experiments for probing and excitation power sweeps.
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
This work introduces a broadband cryogenic receiver for scalable multiplexed readout of qubits. The receiver utilizes a double quadrature architecture with amplitude and phase error suppression. The hybrid poly-phase filter (PPF) is applied in the architecture to further reduce the input amplitude and phase errors at the radio frequency (RF) end, enhancing the circuit's overall error vector magnitude (EVM). To address the issue of wide bandwidth (BW) for qubit expansion, a low noise amplifier (LNA) with broadband input and noise matching and an improved four-input intermediate frequency amplifier (IF-AMP) with a resistance feedback structure are proposed, achieving a broadband gain response with high flatness. The chip has been designed in standard 55 nm CMOS technology. The LNA achieves a measured power gain of 27.4 dB at 5 GHz with a -3 dB BW of 5.2 GHz at 6 K. Across the entire band of interest, the measured noise figure (NF) deviates by just 0.15 dB from the minimum noise figure (NFmin) and less than 2 dB at 300K, while the measured cryogenic NF falls within the range of 0.79-1 dB. The LNA consumes only 5.5 mW from a 1.2 V supply. Simulation results of the designed receiver indicate that it delivers an average gain of 49.5 dB with a -3 dB BW of 2.4 GHz and an image rejection ratio (IRR) exceeding 40 dB at 300 K.
The measurement of the fast-increasing number of qubits necessitates the use of a large number of specialized cryogenic low-noise amplifiers (LNAs).). This work presents a broadband LNA designed with discrete GaAs HEMT components which operate well at ~3.6 K temperature. The dual-frequency optimum noise matching network and output matching elements of the first stage were employed to optimize the equivalent noise temperature (NT) and the input return loss in a wideband. Measurement results at 3.6 K ambient temperature show that the LNA achieved an equivalent NT of30 dB in the 3.5 GHz to 7.5 GHz band with a minimum of 5 Kelvin at ~6.5 GHz. The best visibility of ~0.891 is achieved when using the LNA to observe a superconducting transmon qubit without using a JPA.
We designed, fabricated, and measured broadband low-noise amplifiers based on Superconducting Quantum Interference Filters (SQIFs) for variety of applications ranging from superconducting quantum bits readout to satellite communication receivers. Our microwave amplifiers (Microwave SQAs) are based on 1-, 5-, 10-, 20-cell serial biSQUID SQIF arrays. The RF input is applied via a 50 Ohm coplanar waveguide connected to a superconducting line coupled to each biSQUID cell and integrated with input/output planar capacitors to define and tune up signal frequency bandwidth. The RF output comes out from the central common line via a balanced output circuit matching to a 50 Ohm output coplanar waveguide. The same circuit is used for symmetrical dc biasing of an array. Microwave SQA samples were fabricated on 5 mm × 5 mm chips using standard HYPRES niobium 4.5 kA/cm2fabrication process. The results of experimental evaluation of our Microwave SQAs based on SQIF serial arrays with different number of biSQUID cells are compared. We have demonstrated a power gain up to 20 dB from 8 to 11 GHz.
A cryogenic low-voltage, broadband low-noise amplifier(LNA) has been designed for qubit state readout systems. The proposed LNA utilizes passive components for noise cancellation. A tri-coupled transformer is utilized to simultaneously achieve broadband input impedance matching and noise matching. Additionally, it incorporates capacitive feedback and an in-phase transformer to effectively cancel noise. Implemented in 28-nm bulk CMOS technology and verified at 10 K, the LNA achieves a maximum gain of 26.7 dB, a −3-dB bandwidth of 2.2 GHz, a lowest noise temperature (NT) of 25 K, a power consumption of 4.05 mW at 0.6-V supply voltage, and a figure of merit (FoM) of 0.12 dB/mW/ph, which is comparable with the recent works.