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Technical Physics Letters

A microwave cryogenic low-noise amplifier based on sige heterostructures

Boris I. Ivanov, M. Grajcar, Ilya L. Novikov, Вострецов Алексей Геннадьевич, Evgeni V. Il’ichev

Published Apr 1, 2016• 18 citations
Publisher

Abstract

A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

DOI
10.1134/s1063785016040076

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A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
We show an experimental study of superconducting X-mon qubit based on low noise wideband measurement setup. The setup includes wide stop-band low frequency filters with a stopband frequency up to 13 GHz, the broadband low-noise cryogenic microwave amplifier (cLNA) operating at 3.8 K. The obtained power dissipation of the cLNA is below 20 mW, the frequency operating ranges from 6 GHz to 12 GHz with a gain of 30 dB. The equivalent noise temperature of the amplifier is bellow 6 K for the presented frequency range. We demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. We show standard qubit experiments: one and two-tones qubit spectroscopy, ac-Stark shift experiments for probing and excitation power sweeps.
The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed in a number of physics, physical chemistry and analytical chemistry applications, such as NMR/NQR/EPR and microwave spectroscopy, Paul traps, Bose-Einstein Condensates (BEC’s) and cavity Quantum Electrodynamics (cQED). Using a generic Low-Noise Amplifier (LNA) architecture for a GaAs enhancement mode High-Electron Mobility FET device, our design has especially been devised for scientific applications where ultra-low-noise amplification systems are sought to amplify and detect weak RF signals under various conditions and environments, including cryogenic temperatures, with the least possible noise susceptibility. The amplifier offers a 16 dB gain and a 0.8 dB noise figure at 2.5 GHz, while operating at room temperature, which can improve significantly at low temperatures. Both dc and RF outputs are provided by the amplifier to integrate it in a closed-loop or continuous-wave spectroscopy system or connect it to a variety of instruments, a factor which is lacking in commercial LNA devices. Following the amplification stage, the RF signal detection is carried out with the help of a post-amplifier and detection system based upon a set of Zero-Bias Schottky Barrier Diodes (ZBD’s) and a high-precision ultra-low noise jFET operational amplifier. The scheme offers unique benefits of sensitive detection and very-low noise amplification for measuring extremely weak on-resonance signals with substantial low- noise response and excellent stability while eliminating complicated and expensive heterodyne schemes. The LNA stage is fully capable to be a part of low-temperature experiments while being operated in cryogenic conditions down to about 500 mK.
This work presents the design and post-layout simulation of a cryogenic SiGe BiCMOS low-noise amplifier (LNA) for superconducting transmon-qubit readout in quantum processors scaling beyond hundreds of qubits. The target specifications are first established and justified by surveying state-of-the-art of cryogenic LNAs and modeling the dispersive qubit readout process. The LNA is implemented with three cascaded stages in common-emitter configuration and employs tuned inductive matching and parallel peaking networks in each stage to optimize noise, gain flatness, and bandwidth while maintaining minimal DC power consumption. The amplifier draws only 1.15 mW from a 0.15 V supply and occupies0.252mm20.252 \text{mm}^{2}0.252mm2. Post-layout simulations confirm input/output S-parameter matching better than−10dB,41−44dB-10 \text{dB}, 41-44 \text{dB}−10dB,41−44dBgain with<3dB<3 \text{dB}<3dBripple,<5K<5 \mathrm{K}<5Knoise temperature across4−9GHz4-9 \text{GHz}4−9GHz, and a worst-case OP1 dB compression point of−19.96.6dBm\mathbf{- 1 9. 9 6. 6 d B m}−19.96.6dBm. A comparative analysis demonstrates that SiGe BiCMOS offers a favorable trade-off between InP HEMT's low noise and CMOS's integration potential for large-scale quantum processors.
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a 5 K equivalent noise temperature and an average gain of 40 dB. We further benchmark this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.
The measurement of the fast-increasing number of qubits necessitates the use of a large number of specialized cryogenic low-noise amplifiers (LNAs).). This work presents a broadband LNA designed with discrete GaAs HEMT components which operate well at ~3.6 K temperature. The dual-frequency optimum noise matching network and output matching elements of the first stage were employed to optimize the equivalent noise temperature (NT) and the input return loss in a wideband. Measurement results at 3.6 K ambient temperature show that the LNA achieved an equivalent NT of30 dB in the 3.5 GHz to 7.5 GHz band with a minimum of 5 Kelvin at ~6.5 GHz. The best visibility of ~0.891 is achieved when using the LNA to observe a superconducting transmon qubit without using a JPA.