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APL Photonics

Amorphous superconducting nanowire single-photon detectors integrated with nanophotonic waveguides

M. Häußler, M. Yu. Mikhaı̆lov, Martin A. Wolff, Carsten Schuck

Published Jul 1, 2020• 24 citations
Publisher

Abstract

Future applications in integrated quantum photonics will require large numbers of efficient, fast, and low-noise single-photon counters. Superconducting nanowire single-photon detectors made from amorphous material systems are best suited to meet these demands, but the integration with nanophotonic circuits has remained a challenge. Here, we show how amorphous molybdenum silicide (MoSi) nanowires are integrated with nanophotonic silicon nitride waveguides in traveling wave geometry. We found a saturated on-chip detection efficiency of (73 ± 10) % for telecom wavelength photons and the sub-10 Hz dark count rate at a temperature of 2.1 K, which allows for operation in robust, compact, and economic cryogenic systems. Applications requiring fast counting will benefit from the sub-5 ns recovery times of our devices that we combine with 135 ps timing accuracy. Achieving this performance with waveguide-integrated amorphous superconductors is an important step toward enabling high yield fabrication of competitive single-photon detectors on a large variety of nanophotonic material systems.

DOI
10.1063/5.0004677

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Future applications in integrated quantum photonics will require large numbers of efficient, fast, and low-noise single-photon counters. Superconducting nanowire single-photon detectors made from amorphous material systems are best suited to meet these demands, but the integration with nanophotonic circuits has remained a challenge. Here, we show how amorphous molybdenum silicide (MoSi) nanowires are integrated with nanophotonic silicon nitride waveguides in traveling wave geometry. We found a saturated on-chip detection efficiency of (73 ± 10) % for telecom wavelength photons and the sub-10 Hz dark count rate at a temperature of 2.1 K, which allows for operation in robust, compact, and economic cryogenic systems. Applications requiring fast counting will benefit from the sub-5 ns recovery times of our devices that we combine with 135 ps timing accuracy. Achieving this performance with waveguide-integrated amorphous superconductors is an important step toward enabling high yield fabrication of competitive single-photon detectors on a large variety of nanophotonic material systems.
Superconducting single-photon detectors (SNSPDs or SSPDs) based on superconducting nanowires offer single photon sensitivity at telecom wavelengths coupled with free running operation, high timing resolution and low dark counts. Amorphous superconducting materials open the pathway to improved yield and integration in advanced photonic applications. We report simulation, fabrication and experimental validation of waveguide integrated molybdenum silicide (MoSi) SNSPDs for scalable integration in quantum photonic circuits.
Photonic integrated circuits hold great potential for realizing quantum technology. Efficient single-photon detectors are an essential constituent of any such quantum photonic implementation. In this regard waveguide-integrated superconducting nanowire single-photon detectors are an ideal match for achieving advanced photon counting capabilities in photonic integrated circuits. However, currently considered material systems do not readily satisfy the demands of next generation nanophotonic quantum technology platforms with integrated single-photon detectors, in terms of refractive-index contrast, band gap, optical nonlinearity, thermo-optic stability and fast single-photon counting with high signal-to-noise ratio. Here we show that such comprehensive functionality can be realized by integrating niobium titanium nitride superconducting nanowire single-photon detectors with tantalum pentoxide waveguides. We demonstrate state-of-the-art detector performance in this novel material system, including devices showing 75% on-chip detection efficiency at tens of dark counts per second, detector decay times below 1 ns and sub-30 ps timing accuracy for telecommunication wavelengths photons at 1550 nm. Notably, we realize saturation of the internal detection efficiency over a previously unattained bias current range for waveguide-integrated niobium titanium nitride superconducting nanowire single-photon detectors. Our work enables the full set of high-performance single-photon detection capabilities on the emerging tantalum pentoxide-on-insulator platform for future applications in integrated quantum photonics.
Fast and efficient detection of single photons with high timing accuracy is a crucial requirement in most quantum optics experiments and enables novel sensing and imaging solutions. Superconducting nanowire single-photon detectors (SNSPD) achieve technology-leading performance in terms of detection efficiency, dark count rate, timing jitter, and detector dead times. However, conventional SNSPDs with high system detection efficiency typically rely on resonant enhancement of the absorption efficiency, thus only achieving attractive detector benchmarks over narrow spectral windows. Waveguide-integrated SNSPDs allow for leveraging the wideband material absorption in superconducting nanowires by absorbing light in a traveling-wave geometry but have been limited to low system detection efficiencies due to interface losses when coupling to optical fibers. Here, we show how high system detection efficiencies of 22%–73% are realized over a broad wavelength range from 532 nm to 1640 nm in a single waveguide-integrated SNSPD device. We accomplish efficient coupling between optical fibers and waveguide-integrated nanowire detectors by employing a 3D interface, produced in direct laser writing, that relies on total internal reflection for achieving a broad transmission bandwidth. We further find low timing jitter of 25.7 ps and detector decay times of 9.8 ns, allowing for single-photon counting with high repetition rates up to 100 MHz. Our work paves the way for an efficient single-photon detector solution that combines the spectral requirements of an extremely wide range of quantum optics experiments in a single device. The coupling approach and SNSPD-integration with nanophotonic circuits are further well-suited for realizing large-scale detector arrays.
Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present SNSPDs embedded in nanophotonic integrated circuits which achieve internal quantum efficiencies close to unity at 1550 nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noise-equivalent powers in the 10(-19) W/Hz(-1/2) range and the timing jitter is as low as 35 ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms.
Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon detection with low dark count rate and high timing accuracy. Here we present very low noise superconducting nanowire single-photon detectors based on NbTiN thin films patterned directly on top of Si3N4 waveguides. We systematically investigate a large variety of detector designs and characterize their detection noise performance. Milli-Hz dark count rates are demonstrated over the entire operating range of the nanowire detectors which also feature low timing jitter. The ultra-low dark count rate, in combination with the high detection efficiency inherent to our travelling wave detector geometry, gives rise to a measured noise equivalent power at the 10(-20) W/Hz(1/2) level.