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IEEE International Superconductive Electronics Conference (ISEC)

Integration of Molybdenum Silicide Superconducting Nanowires with Quantum Photonic Circuits for On-Chip Single Photon Detection

Kleanthis Erotokritou, Robert M. Heath, Archan Banerjee, Marc Sorel, Robert H. Hadfield

Published Jun 1, 2017• 0 citations
Publisher

Abstract

Superconducting single-photon detectors (SNSPDs or SSPDs) based on superconducting nanowires offer single photon sensitivity at telecom wavelengths coupled with free running operation, high timing resolution and low dark counts. Amorphous superconducting materials open the pathway to improved yield and integration in advanced photonic applications. We report simulation, fabrication and experimental validation of waveguide integrated molybdenum silicide (MoSi) SNSPDs for scalable integration in quantum photonic circuits.

DOI
10.1109/isec.2017.8314227

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Superconducting single-photon detectors (SNSPDs or SSPDs) based on superconducting nanowires offer single photon sensitivity at telecom wavelengths coupled with free running operation, high timing resolution and low dark counts. Amorphous superconducting materials open the pathway to improved yield and integration in advanced photonic applications. We report simulation, fabrication and experimental validation of waveguide integrated molybdenum silicide (MoSi) SNSPDs for scalable integration in quantum photonic circuits.
Future applications in integrated quantum photonics will require large numbers of efficient, fast, and low-noise single-photon counters. Superconducting nanowire single-photon detectors made from amorphous material systems are best suited to meet these demands, but the integration with nanophotonic circuits has remained a challenge. Here, we show how amorphous molybdenum silicide (MoSi) nanowires are integrated with nanophotonic silicon nitride waveguides in traveling wave geometry. We found a saturated on-chip detection efficiency of (73 ± 10) % for telecom wavelength photons and the sub-10 Hz dark count rate at a temperature of 2.1 K, which allows for operation in robust, compact, and economic cryogenic systems. Applications requiring fast counting will benefit from the sub-5 ns recovery times of our devices that we combine with 135 ps timing accuracy. Achieving this performance with waveguide-integrated amorphous superconductors is an important step toward enabling high yield fabrication of competitive single-photon detectors on a large variety of nanophotonic material systems.
Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present SNSPDs embedded in nanophotonic integrated circuits which achieve internal quantum efficiencies close to unity at 1550 nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noise-equivalent powers in the 10(-19) W/Hz(-1/2) range and the timing jitter is as low as 35 ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms.
We demonstrate a molybdenum silicide superconducting nanowire single-photon detector heterogeneously integrated onto a thin-film lithium niobate waveguide. The detector achieves approximately 50% on-chip detection efficiency at 1550 nm with a jitter of 82 ps when measured at 0.78 K. This demonstration showcases the integration of an amorphous superconductor utilizing conventional fabrication processes without strict cooling and substrate requirements. This paves the way for the integration of additional superconducting electronic components, potentially realizing the full promise of integrated quantum photonic circuits.
Single photon detectors (SPD) are largely used when the signal to be measured is particularly low or if high accuracy, timing resolution and low noise are required. About twenty years ago, a new type of SPD based on superconducting materials appeared, and today these devices present the best performances in terms of efficiency, noise, counting rate, detectable wavelength, dead time, and timing jitter. In this work, we first describe the working principle of Superconducting Nanostrips Single Photon Detectors (SNSPDs) and provide a brief overview of the main properties and applications. Then, we present the results of the fabrication and characterization of Molybdenum Silicide SNSPDs with a cover layer of a thin Aluminium film (MoSi/Al). MoSi has already been adopted to fabricate SNSPDs, and in this work, we prove that the additional Al layer enhances the operating conditions without compromising the detection likelihood and leaving unaltered the properties of the device, even over a temporal window of two years and after several thermal cycles.
We report on MoSi-based superconducting nanowire single-photon detectors on a gallium arsenide substrate. MoSi deposited on a passivated GaAs surface has the same critical temperature as MoSi deposited on silicon. The critical temperature decreases slightly on depositing MoSi directly on the native oxide of GaAs. Hence, MoSi works well as a thin-film superconductor on GaAs. We propose that the amorphous structure of MoSi ensures compatibility with the GaAs matrix. Superconducting nanowire single-photon detectors (SNSPDs) are fabricated with MoSi on GaAs using a meander-wire design. The SNSPD metrics are very similar to those of devices fabricated with the same procedure on a silicon substrate. We observe a plateau in the response-versus-bias curve signalling a saturated internal quantum efficiency. The plateau remains even at an elevated temperature, 2.2 K, at a wavelength of 980 nm. We achieve a timing jitter of 50 ps and a recovery time of 29 ns. These results point to the promise of integrating MoSi SNSPDs with GaAs photonic circuits.