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Softwaretechnik-Trends

Properties of Nb Thin Films and their Application for Diffusion-Cooled Hot-Electron Bolometer

Michael Frommberger, François Mattiocco, Philippe Sabon, Matthias Schicke, Karl-Friedrich Schuster, Olivier Laborde

Published May 1, 2000• 4 citations
OpenAlex

Abstract

The performance of hot electron bolometer mixer devices made out of superconducting thin films critically depends on film quality. We discuss various deposition conditions for Nb films and present their properties for a wide thickness range. The obtained film parameters allow to predict the characteristics of our actual devices. We also shortly present a new fabrication process for Nb diffusion cooled hot electron bolometer mixers. I.

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Superconducting properties of Nb and NbN thin films for application in diffusion and phonon cooled Hot-Electron Bolometers have been systematically investigated. The materials were sputtered on fused quartz substrates in a wide thickness range. DC-measurements of the Nb films allow us to predict the intermediate frequency bandwidth of a hot-electron bolometer mixer device for a given design. To improve the characteristics of the NbN thin films, we used a 15 nm MgO seed layer.

IEEE Transactions on Applied Superconductivity•Mar 1, 2001•6 citations

Ultra-thin film NbN depositions for HEB heterodyne mixer on Si-substrates

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The key of improving hot-electron bolometer (HEB) mixer performance lies inevitably in the quality of ultra-thin NbN films itself. This work presents a thorough investigation of crucial process parameters of NbN films deposited by means of reactive DC-sputtering on Si-substrates at elevated temperatures up to 750°C.The polycrystalline NbN films with thickness of 4 to 10nm were characterized by DC resistivity measurements, ellipsometry and high resolution transmission electron microscopy (HRTEM) in order to confirm thickness and film structure. Since the macroscopic properties such as critical temperature, thickness as well as the transition width to the superconducting state are directly linked to HEB mixer noise temperature and IF bandwidth, a set of experiments were conducted to enhance aforementioned properties. We considered deposition temperature, RF biasing, nitrogen and argon partial and total pressure during deposition as major process variable parameters. Careful optimization of the deposition conditions allowed setting up a process resulting in high-quality NbN ultra-thin films with thickness of 5.5nm exhibiting Tc of 10.5K. Moreover, the transition width could be kept as low as 1.4K. The produced films were stored at ambient conditions and re-characterized over a period of 4 month without measurable degradation.

•Jan 1, 2013•0 citations

NbN FILM DEVELOPMENT FOR PHONON-COOLED HEB DEVICES

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Superconducting Hot-electron Bolometric (HE.B) mixers employing thin films ofNbN have become the devices of choice for heterodyne detection at tera,hertz frequen- cies. HEB mixers are inherently insensitive to the bandgap frequency of the superconducting material used in the device, in contrast to SIS mixers,. We have developed a fabrication pro- cess for thin NbN films at the National Institute of Standards and Technology in Boulder, CO. A two-fold approach can be taken. The first is to maximize the critical temperature of the superconducting device by growing thicker films at the expense of IF bandwidth, whereas the second approach focuses on maximizing the IF bandwidth at the expense of the critical tem- perature. So far, we have developed a film-deposition process utilizing our DC reactive mag- netron sputtering chamber. By current-biasing the RF plasma in a mixture of Ar and N2, while using a Nb target, we can control the film stoichiometry and produce films with thicknesses of 5 nm. The films are deposited on MgO substrates that are heated to about 800 °C during depo- sition. A typical critical temperature (TO is about 10 K and the transition width is very small (0.5 K). The films are evaluated by measuring their superconducting characteristics as well as their thickness and surface roughness by means of AFM analysis. Phonon-cooled HEB devices are fabricated from the films to study their performance as HEB mixers. The device fabrication process at UMass/Amherst involves lift-off lithography of the antenna (gold), and Reactive ion etching (R1E) or wet etching of the NbN. The I-V char- acteristics and noise temperatures of the devices were measured in order to determine their quality for PHEB applications.

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During the last few years significant progress has been made in the field of hot-electron bolometer (HEB) mixers. It has been possible to combine a low noise temperature and high stability of phonon-cooled HEBs with an ultrawide gain bandwidth of the diffusion-cooled HEBs in a single device and thus create HEB mixers which offer a noise temperature of 5hν/kB across a 7-GHz band. The essential ingredient of this success is the in situ fabrication technology, where the deposition of the gold contacts follows the deposition of the superconducting film without vacuum breaking. Despite the evident technological breakthrough, the details of certain physical processes occurring both at the superconductor-normal metal (SN) interface and in the superconducting bridge are not completely understood in terms of their influence on the mixer performance. In particular, it is still unclear to what extent the properties of the SN interface are affected by the deposition temperatures of the superconductor and the normal metal, and also by the time interval elapsed between the deposition processes. We will gain some insight into the matter by studying the behaviour of the superconducting transition as a function of the deposition temperatures and time delay. A better understanding of this issue will allow us to move forward the HEB mixer technology towards new applications.

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European Microwave Conference (EuMC)•Sep 1, 1997•25 citations

Analysis of the Noise Performance of a Hot-Electron Superconducting Bolometer Mixer

Boris S. Karasik, A. I. Elant’ev

A theoretical analysis for the noise temperature of hot—electron superconducting mixer has been presented. The contributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteria ensuring low noise performance of the mixer has been stated and a simple analytic expression for the noise temperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivity does not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noise mechanisms has been estimated to be as low as 40-90 K for a mixer device made from Nb or NbN thin film. Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperature relaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidth is of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been made when a distinction between the impedance measured at high intermediate frequency (larger than the mixer bandwidth) and the mixer ohmic resistance has been taken into account. Recently obtained experimental data on Nb and NbN bolometer mixer devices are viewed in connection with the theoretical predictions. The noise temperature limit has also been specified for the mixer device where an outdiffusion cooling mechanism rather than the electron—phonon energy relaxation determines the mixer bandwidth. A consideration of the noise performance of a bolometer mixer made from YBaCuO film utilizing a hot—electron effect has been done.

•Mar 1, 1995•29 citations
The performance of hot electron bolometer mixer devices made out of superconducting thin films critically depends on film quality. We discuss various deposition conditions for Nb films and present their properties for a wide thickness range. The obtained film parameters allow to predict the characteristics of our actual devices. We also shortly present a new fabrication process for Nb diffusion cooled hot electron bolometer mixers. I.
The key of improving hot-electron bolometer (HEB) mixer performance lies inevitably in the quality of ultra-thin NbN films itself. This work presents a thorough investigation of crucial process parameters of NbN films deposited by means of reactive DC-sputtering on Si-substrates at elevated temperatures up to 750°C.The polycrystalline NbN films with thickness of 4 to 10nm were characterized by DC resistivity measurements, ellipsometry and high resolution transmission electron microscopy (HRTEM) in order to confirm thickness and film structure. Since the macroscopic properties such as critical temperature, thickness as well as the transition width to the superconducting state are directly linked to HEB mixer noise temperature and IF bandwidth, a set of experiments were conducted to enhance aforementioned properties. We considered deposition temperature, RF biasing, nitrogen and argon partial and total pressure during deposition as major process variable parameters. Careful optimization of the deposition conditions allowed setting up a process resulting in high-quality NbN ultra-thin films with thickness of 5.5nm exhibiting Tc of 10.5K. Moreover, the transition width could be kept as low as 1.4K. The produced films were stored at ambient conditions and re-characterized over a period of 4 month without measurable degradation.
Superconducting Hot-electron Bolometric (HE.B) mixers employing thin films ofNbN have become the devices of choice for heterodyne detection at tera,hertz frequen- cies. HEB mixers are inherently insensitive to the bandgap frequency of the superconducting material used in the device, in contrast to SIS mixers,. We have developed a fabrication pro- cess for thin NbN films at the National Institute of Standards and Technology in Boulder, CO. A two-fold approach can be taken. The first is to maximize the critical temperature of the superconducting device by growing thicker films at the expense of IF bandwidth, whereas the second approach focuses on maximizing the IF bandwidth at the expense of the critical tem- perature. So far, we have developed a film-deposition process utilizing our DC reactive mag- netron sputtering chamber. By current-biasing the RF plasma in a mixture of Ar and N2, while using a Nb target, we can control the film stoichiometry and produce films with thicknesses of 5 nm. The films are deposited on MgO substrates that are heated to about 800 °C during depo- sition. A typical critical temperature (TO is about 10 K and the transition width is very small (0.5 K). The films are evaluated by measuring their superconducting characteristics as well as their thickness and surface roughness by means of AFM analysis. Phonon-cooled HEB devices are fabricated from the films to study their performance as HEB mixers. The device fabrication process at UMass/Amherst involves lift-off lithography of the antenna (gold), and Reactive ion etching (R1E) or wet etching of the NbN. The I-V char- acteristics and noise temperatures of the devices were measured in order to determine their quality for PHEB applications.
During the last few years significant progress has been made in the field of hot-electron bolometer (HEB) mixers. It has been possible to combine a low noise temperature and high stability of phonon-cooled HEBs with an ultrawide gain bandwidth of the diffusion-cooled HEBs in a single device and thus create HEB mixers which offer a noise temperature of 5hν/kB across a 7-GHz band. The essential ingredient of this success is the in situ fabrication technology, where the deposition of the gold contacts follows the deposition of the superconducting film without vacuum breaking. Despite the evident technological breakthrough, the details of certain physical processes occurring both at the superconductor-normal metal (SN) interface and in the superconducting bridge are not completely understood in terms of their influence on the mixer performance. In particular, it is still unclear to what extent the properties of the SN interface are affected by the deposition temperatures of the superconductor and the normal metal, and also by the time interval elapsed between the deposition processes. We will gain some insight into the matter by studying the behaviour of the superconducting transition as a function of the deposition temperatures and time delay. A better understanding of this issue will allow us to move forward the HEB mixer technology towards new applications.
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 μ wide and 2 μ long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
A theoretical analysis for the noise temperature of hot—electron superconducting mixer has been presented. The contributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteria ensuring low noise performance of the mixer has been stated and a simple analytic expression for the noise temperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivity does not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noise mechanisms has been estimated to be as low as 40-90 K for a mixer device made from Nb or NbN thin film. Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperature relaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidth is of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been made when a distinction between the impedance measured at high intermediate frequency (larger than the mixer bandwidth) and the mixer ohmic resistance has been taken into account. Recently obtained experimental data on Nb and NbN bolometer mixer devices are viewed in connection with the theoretical predictions. The noise temperature limit has also been specified for the mixer device where an outdiffusion cooling mechanism rather than the electron—phonon energy relaxation determines the mixer bandwidth. A consideration of the noise performance of a bolometer mixer made from YBaCuO film utilizing a hot—electron effect has been done.