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Physics of Wave Phenomena

Giant Kerr Nonlinearity for Three-Coupled-Quantum-Well Nanostructures

Ali Raheli

Published Jul 1, 2018• 2 citations
Publisher

Abstract

A four level ladder scheme is employed for the realization of slow light large Kerr nonlinear indices in an asymmetric semiconductor three-coupled-quantum-well (TCQW) structure based on intersubband transitions. It is shown that a giant Kerr nonlinearity accompanied with negligible loss can be achieved by properly tuning the intensity of the control fields. A dressed state analysis is given to explain the origin of such a transparency based on slow light enhanced Kerr nonlinearity in this solid medium. In addition, we show that the three-photon detuning plays the important role in enhancing the third-order nonlinearity of the TCQW medium, and may provide new possibilities for technological applications in nonlinear optics and optical switching.

DOI
10.3103/s1541308x18030020

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A four level ladder scheme is employed for the realization of slow light large Kerr nonlinear indices in an asymmetric semiconductor three-coupled-quantum-well (TCQW) structure based on intersubband transitions. It is shown that a giant Kerr nonlinearity accompanied with negligible loss can be achieved by properly tuning the intensity of the control fields. A dressed state analysis is given to explain the origin of such a transparency based on slow light enhanced Kerr nonlinearity in this solid medium. In addition, we show that the three-photon detuning plays the important role in enhancing the third-order nonlinearity of the TCQW medium, and may provide new possibilities for technological applications in nonlinear optics and optical switching.
A scheme for giant enhancement of the Kerr nonlinearity in linear triple quantum dot molecules is proposed. In such a system, the tunneling-induced transparency window obtained in double quantum dot molecules splits into two windows, due to the coupling with the third quantum dot. And most important, the Kerr nonlinearity can be enhanced by several orders of magnitude, compared with that generated in double quantum dot molecules. With proper detuning of the tunneling, giant Kerr nonlinearity accompanied by vanishing absorption can be realized, which opens the possibility to enhance self-phase modulation in tunneling controllable semiconductor nanostructures under conditions of low light levels. Quantitative analysis shows that the giant Kerr nonlinearity is attributed to the interacting double dark resonances induced by the tunneling between the triple quantum dots, therefore no extra laser fields are required.
Abstract In this article, we present an alternative excitation scheme for the study of optical responses of the probe field in a five-level semiconductor coupled quantum wells (CQWs). It is shown that in the linear case, our study reveals the formation of double and triple electromagnetically induced transparency (EIT) windows for the suitable values of Rabi-frequency of the control fields, while the linear dispersion is also tuned from anomalous to normal and vice versa within small range of detuning. Interestingly, we find that by properly adjusting the appropriate values of control field detunings, the behaviour of optical absorption and transparency is found to be asymmetric in nature. In addition, we also found that due to quantum coherence, nonlinear dispersion, specifically Kerr nonlinearity is dramatically enhanced with nearly vanishing linear absorption under EIT. The Kerr nonlinearity in the present scheme is identified to be very large ( ∼10−13 m2 V−2\:\sim{10}^{-13}\:{m}^{2}\:{V}^{-2}∼10−13m2V−2) in the mid IR range ( λ p=4.74  μ m\:{\lambda\:}_{p}=4.74\:\:\mu\:mλp​=4.74μm), which can be very useful for the investigation of several nonlinear phenomena at low light intensity in CQWs. The results of the investigations may have potential applications in optical switching devices at low powers, quantum information processing and many more in solid-state laser based system.
A theoretical scheme for enhanced Kerr nonlinearity is proposed in a four-level ladder-type atomic system based on double dark resonances (DDRs). We solve the relevant density matrix equations in steady state and utilize the perturbation theory to obtain the analytical expressions for the third order susceptibility of the atomic system. The influence of system parameters on behavior of the first and third order susceptibilities is then discussed. In particular, it is found that an enhanced Kerr nonlinearity with reduced linear and nonlinear absorption is obtained around zero probe detuning under the slow light condition through proper adjusting the laser field intensity and frequency detuning of driving fields. The dressed state analysis is employed to explain the physical origin of the obtained result. The obtained results may be important for all-optical signal processing and quantum information technology.
We have studied two-dimensional absorption and gain spectrum in an asymmetric semiconductor triple-coupled-quantum-well (TCQW) nanostructure. Four subband transitions are coupled by using four coherent fields in a close-loop configuration to introduce cross-Kerr effect and four-wave-mixing (FWM) induced nonlinearity in achieving nonlinear absorption and gain profiles. Position-dependent absorption and gain are obtained by applying one, or two coherent fields in a variety of standing wave configurations including superposed field configuration in the standing-wave regime. In addition to the control parameters like Rabi frequency and detuning, the specialty of the model is to employ double-controlled spatial phase-coherence guided by the FWM-induced phase and the phases introduced by the standing wave formation. Our results highlight the high-precision electron localization in spatial domain. The evolution of spatially modulated gain without inversion may be a substitute for obtaining gain from a traditional quantum cascade laser. The importance of the present work is to find its application in designing electro-optic modulators in semiconductor nanostructures in near future.
The coherent coupling between three quantum dots via tunneling fields leads to double tunneling-induced transparency and giant Kerr nonlinearity with vanishing absorption. This creates the possibility to achieve self-phase modulation in semiconductor nanostructures via controllable tunneling under the conditions of low light levels. As a result, a considerably high refractive index can be obtained. We suggest an intracavity medium which consists of triple quantum dot molecules to control the Goos–Hänchen (GH) shifts in the reflected light. For a suitable design of a triple quantum dot system, our results show that relatively large positive and negative GH shifts are achievable, without significant distortion, using partially coherent incident light fields.
The cross-Kerr nonlinearity arising between two far-infrared (FIR) pulses is investigated in a three-coupled-quantum-well (TCQW) structure based on intersubband transitions. The results show that the giant Kerr nonlinearity with a relatively large cross-phase-modulation phase shift can be used for realizing polarization quantum phase gate in this TCQW structure. Such a semiconductor system is much more practical than its atomic counterpart because of its flexible design and the wide tunable parameters. This protocol may have potential applications in FIR all-optical switch design and quantum information processing with solid-state materials.