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IEICE Technical Report; IEICE Tech. Rep.

Evaluation of various memory cells designed for SFQ mask ROM

Kazunao Sawada, Tomoki Watanabe, Hiroshi Shimada, Yoshinao Mizugaki

Published Jan 14, 2016• 0 citations
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We have developed a single-flux-quantum (SFQ) read only memory (ROM) cell. The developed SFQ ROM cell has compatibility with an existing cell library. It comprises splitters and confluence buffers. For large integration, we have merged two 1-bit cells into one cell with peripheral elements, and we have optimized circuit parameters with an automatic optimization tool. The cell area is approximately 50% of our preliminary SFQ sequential ROM cell using the CONNECT cell library. A test circuit was fabricated using a 25 μA/ μm2Nb integration process. We have confirmed correct operation for all six I/O ports. The measured bias margins were almost the same magnitude as the simulation result.

IEEE International Superconductive Electronics Conference (ISEC)•Jul 1, 2015•1 citation
We have developed a single-flux-quantum (SFQ) read only memory (ROM) cell. The developed SFQ ROM cell has compatibility with an existing cell library. It comprises splitters and confluence buffers. For large integration, we have merged two 1-bit cells into one cell with peripheral elements, and we have optimized circuit parameters with an automatic optimization tool. The cell area is approximately 50% of our preliminary SFQ sequential ROM cell using the CONNECT cell library. A test circuit was fabricated using a 25 μA/ μm2Nb integration process. We have confirmed correct operation for all six I/O ports. The measured bias margins were almost the same magnitude as the simulation result.