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Technical digest - International Electron Devices Meeting/Technical digest

A Josephson driver to interface Josephson junctions to semiconductor transistors

Hideo Suzuki, A. Inoue, T. Imamura, S. Hasuo

Published Jan 6, 2003• 74 citations
Publisher

Abstract

An output voltage of 150 mV was obtained with a risetime of less than 200 ps at the driver, which contained 104 junctions and 2 resistors. The driver was also used to drive a D-HEMT (high-electron mobility transistor), and an output voltage of 0.9 V with a risetime of 500 ps was obtained from the HEMT. This experiment suggests that the Josephson driver developed can be used for a Josephson computer or a SQUID (superconducting quantum interference device) system as an interface gate to drive room-temperature electronic devices.>

DOI
10.1109/iedm.1988.32814

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An output voltage of 150 mV was obtained with a risetime of less than 200 ps at the driver, which contained 104 junctions and 2 resistors. The driver was also used to drive a D-HEMT (high-electron mobility transistor), and an output voltage of 0.9 V with a risetime of 500 ps was obtained from the HEMT. This experiment suggests that the Josephson driver developed can be used for a Josephson computer or a SQUID (superconducting quantum interference device) system as an interface gate to drive room-temperature electronic devices.>
We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-/spl mu/m gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and /spl sim/3-dB frequency of 8 GHz. A 0.63-V/sub p-p/ output was obtained from a 5-GHz, 30-mV/sub p-p/ complementary input signal. We succeeded in transfer ring a voltage signal from 10-stack Josephson high-voltage drivers to a 50-/spl Omega/ system at room temperature with 0.7-V/sub p-p/ amplitude at 300-MHz clock using the HEMT amplifier.
We have developed and demonstrated high bandwidth Josephson circuits to interface the output of RSFQ circuits to room temperature electronics. Asynchronous dc powered voltage driver circuits have been designed to amplify RSFQ signal levels to voltage outputs in the 2-4 mV range, in a wide bandwidth. These driver circuits have been characterized and tested for data rates up to 8 Gb/s. The bit error rate for one of these drivers has been measured up to 7 Gb/s for a (2/sup 31/-1) bit long pseudo-random bit sequence (PRBS). In order to match the data rate of Josephson circuits to slower room temperature electronics, we have developed clock-controlled shift registers which allow shift-in and shift-out of data at different frequencies. Complete functionality of these circuits integrated with the drivers has been demonstrated at low speed. Shift registers integrated with the voltage driver circuits have been tested at high-speed for data rates up to 6 Gb/s.
Latching-type driver circuits integrated with high-temperature superconductivity (HTS) junctions and two types of resistor were fabricated. These circuits could successfully perform latching operation by means of a single-flux-quantum (SFQ) signal input. Ramp-edge-type HTS junctions were fabricated by interface engineering and showed a hysteretic current-voltage characteristics under a temperature of 50 K. The critical current (I/sub c/) of these 5-micron-wide junctions was about 0.2 mA and the I/sub c/R/sub n/ product was about 1.7 mV at 4.2 K. The circuits included two types of resistors, which were made of RF-magnetron-sputtered indium-tin-oxide (ITO) and Au films. A driver with a parallel 2-junction-stack could convert an SFQ pulse, which was transformed through several Josephson transmission lines (JTL's) from a DC/SFQ circuit, to a 2.3-mV level signal.
The high-speed operation of a one-channel output interface for a single-flux quantum (SFQ) system has been demonstrated. The interface consisted of a Josephson latching driver, a room-temperature semiconductor amplifier, and a decision circuit module. The Josephson latching driver was fabricated by using a 2.5-kA/cm/sup 2/ standard Nb junction process and used to amplify an SFQ pulse into a 5.5-mV level signal at 10 Gb/s. The interface converted the SFQ pulse signal into a nonreturn-to-zero signal having an amplitude of 1 V at 10 Gb/s.
As the quantum generation of electronics takes the stage, a cast of important support electronics is needed to connect these novel devices to our classical worlds. In the case of superconducting electronics, this is a challenge because the Josephson junction devices they are based upon require tiny current pulses to create and manipulate the single flux quanta which guide their operation. Difficulty arises in transitioning these signals through large temperature gradients for connection to semiconductor components. In this work, we present nano superconducting quantum interference devices (SQUID) with critical dimensions as small as 10 nm from the high-transition-temperature superconductor YBa2_22​Cu3_33​O7−δ_{7-δ}7−δ​ (YBCO). We integrate these nano-SQUIDs with nano-isolated inductively coupled control lines to create a low power superconducting output driver capable of transimpedance conversion over a very wide temperature range.