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International Conference on Solid State Devices and Materials (SSDM)

Single photon generation from an impurity center with well-defined emission energy in GaAs

L. Zhang, Michio Ikezawa, Tatsuya Mori, S. Umehara, Yoshiki Sakuma, Kazuaki Sakoda, Yasuaki Masumoto

Published Sep 25, 2012• 0 citations
Publisher

Abstract

We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.

DOI
10.7567/ssdm.2012.ps-7-2

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We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
Luminescence from single isoelectronic traps in nitrogen δ-doped gallium phosphide was studied by micro-photoluminescence spectroscopy. These single traps were found to emit photons that were nearly identical in both emission energy and brightness. Furthermore, single photon emission from a single nitrogen pair is confirmed by a strong antibunching under continuous optical excitation at 30 K. These results imply that single nitrogen pairs in GaP might be useful for realizing unique sources of energetically-defined single photons, and even indistinguishable photons.
We report visible single-photon emission from a nitrogen impurity center in AlAs grown on GaAs(001). Sharp emission lines are observed at 2.1–2.2 eV, below the X-conduction bandedge of AlAs from N δ-doped AlAs. The quadratic increase in the photoluminescence intensity with the N concentration reveals that the nitrogen impurity centers consist of NN pairs. Polarization analysis reveals that the peak at 2.191 eV consists of different pair configurations, while the peak at 2.165 eV contains only a single pair configuration along the 〈110〉 direction. Photon correlation measurement gives the second-order correlation function g(2)(0) = 0.33, demonstrating single-photon statistics in emissions from an NN pair.
Abstract A key challenge in realizing scalable optical quantum information technology is not only to obtain stable single photons coupled to single-mode fibers but also to match the emission energy between remote emitters. We have fabricated an energy-matching favorable and long-term stable structure by coupling a nitrogen impurity center with a well-defined emission energy to a single-mode optical fiber core. The nitrogen-doped GaAs microflakes sandwiched between the two FC (acronym for "ferrule connector" or "fiber channel") connectors yielded sharp emission peaks due to nitrogen isoelectronic traps. Although some emitters showed spectral diffusion, the unaffected emitters showed stable emission and were able to generate photons stably for over 20 h continuously without photodegradation. In addition, the photoluminescence spectrum does not change in shape and intensity after more than 3 years, indicating that the photon source with this structure is resistant to thermal cycling and positional drift and has excellent long-term stability.
We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280 micro eV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.
We report on the observation of optically active colour centres based on Nickel-Nitrogen impurities in natural diamond samples. These emitters can efficiently generate single photons in the near infrared. Their photoluminescence is perfectly stable at room temperature and has several striking features, such as a narrow band emission around 780 nm and a short photon emission lifetime around 2 ns. We present a detailed study of their photophysical properties measured under continuous-wave excitation.