Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review Letters

Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

Stefan Strauf, Peter Michler, M. Klude, D. Hommel, Gerd Bacher, A. Forchel

Published Oct 8, 2002• 96 citations
Publisher

Abstract

We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280 micro eV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.

DOI
10.1103/physrevlett.89.177403

Related papers

Optically Active Single Hole Spin in ZnSe

Amirehsan Alizadehherfati, Yuxi Jiang, Kelsey J. Mirrielees +7 more

Semiconductor hole spins offer a pathway to extended coherence times by decoupling from nuclear magnetic noise, while their spin-orbit coupling enables fast all-electrical control. In ZnSe, however, realizing this potential has been limited by p-doping challenges. Here, we circumvent this limit by optically activating acceptors within the ZnSe quantum well. We isolate a single-hole spin bound to a shallow acceptor, confirmed by antibunching and accessed via the fast (244 ps) radiative recombination of a bound exciton. Magnetic and Raman spectroscopy of the ground state reveal an effective hole g-factor of 0.7 and an optical resonance linewidth of 26.7 GHz. Complementary first-principles simulations, together with the experimental results, provide evidence that points toward nitrogen as the most likely acceptor impurity. These results introduce a promising new platform for optically active spin qubits and single-photon sources in ZnSe.

quant-pharXiv:2607.00110•Jul 2, 2026

Single photon generation from an impurity center with well-defined emission energy in GaAs

L. Zhang, Michio Ikezawa, Tatsuya Mori +4 more

We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.

International Conference on Solid State Devices and Materials (SSDM)•Sep 25, 2012•0 citations

Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs

Liao Zhang, Michio Ikezawa, Tatsuya Mori +4 more

We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.

Japanese Journal of Applied Physics•Apr 1, 2013•8 citations

Photon antibunching and nonlinear effects for a quantum dot coupled to a semiconductor cavity

Frank Bello, David M. Whittaker

The models presented simulate pumping techniques that can be used on modern semiconductor devices which are capable of coupling a quantum dot and cavity mode in order to determine a more efficient method of producing a single-photon emitter while taking into consideration typical parameters which are achievable given today's standards of coupling strength. Cavity quantum electrodynamics are incorporated in the calculations as we compare various pumping schemes for the system that either use on-resonant laser excitation or nonresonant excitation due to a wetting layer. In particular, we look to study how antibunching effects change for each method as the cavity finesse is increased toward the strong coupling regime. Experimentally these studies are equivalent to nonlinear pump-probe measurements, where a strong pump, either resonant or nonresonant, is used to excite the coupled system, and the resulting state is characterized using a weak, resonant probe beam.

arXiv:0808.3280•Physical Review B•Sep 28, 2010•4 citations

Generation of coherent quantum light from a single impurity-bound exciton

Yuxi Jiang, Christine Falter, Robert M. Pettit +6 more

Impurity-bound excitons in II-VI semiconductors are promising optically active solid-state spin qubits that combine exceptional optical quantum efficiency with a low-noise spin environment. Previous studies on single impurities in these materials relied on incoherent optical excitation to generate photons. However, many quantum applications require resonant driving of quantum emitters to precisely control optical transitions and maintain coherence of the emission. Here, we demonstrate coherent optical emission of quantum light from a resonantly driven single impurity-bound exciton in ZnSe. The resonantly driven emitter exhibits bright quantum emission that preserves the phase of the resonant drive. It also features an intensity-dependent nonlinear phase shift at low photon numbers. Resonant excitation enables direct measurement of the Debye-Waller factor, determined to be 0.94, which indicates high efficiency emission to the zero-phonon line. Time-resolved resonance fluorescence measurements reveal a fast optically driven ionization process, along with a slower spontaneous ionization process having a lifetime of 21 μ s due to charge tunneling from the impurity. These results pave the way for coherent generation of quantum light and low-photon-number nonlinear optics through resonant excitation of impurity-bound excitons.

arXiv:2412.01677•npj Quantum Information•Aug 13, 2026•0 citations

Ultra-coherent resonant emission of single quantum dots

Hai Son Nguyen, Gregory C. Sallen, Christophe Voisin +3 more

Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by non-resonant and resonant photoluminescence experiments in single QDs [1,2]. Up to now, all the measurements reported in the literature focus on the incoherent photoluminescence signal for achieving single photon emission. In this regime, the linewidth of the photoluminescence spectrum is limited to the so-called radiative limit. In this paper, we report on the resonant emission (RE) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [2]. We present an original type of single photon source based on the coherent laser light scattering by a single QD [3]. Besides the antibunching effect showing the nonclassical nature of the emitted light, we observe that the QD emission spectrum is determined by the spectrum of the resonant excitation laser. Figure (a,b,c) shows high-resolution measurements by Fourier transform spectroscopy of the RE where the data are fitted to the first-order correlation function g(1)(τ) of the RE of a two-level system. The inverse Fourier transform of the g(1)(τ) function allows a direct comparison of the different RE emission profiles in figure (d,e,f). By reducing the resonant excitation power, the Mollow triplet shrinks to a single narrow Lorentzian line, while the relative intensity of this narrow peak increases and tends to overwhelm the RE spectrum. This implies that single QDs can produce single photons with a coherence time that is not limited anymore by the QD electronic properties, resulting in an ultra-coherent character [3]. References [1] P. Michler et al, Science 290, 2282 (2000). [2] H. S. Nguyen et al, Phys. Rev. Lett. (accepted, in press). See arXiv 1109.4304. [3] H. S. Nguyen et al, Appl. Phys. Lett. 99, 261904 (2011).

•May 13, 2012•0 citations
We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280 micro eV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.
Semiconductor hole spins offer a pathway to extended coherence times by decoupling from nuclear magnetic noise, while their spin-orbit coupling enables fast all-electrical control. In ZnSe, however, realizing this potential has been limited by p-doping challenges. Here, we circumvent this limit by optically activating acceptors within the ZnSe quantum well. We isolate a single-hole spin bound to a shallow acceptor, confirmed by antibunching and accessed via the fast (244 ps) radiative recombination of a bound exciton. Magnetic and Raman spectroscopy of the ground state reveal an effective hole g-factor of 0.7 and an optical resonance linewidth of 26.7 GHz. Complementary first-principles simulations, together with the experimental results, provide evidence that points toward nitrogen as the most likely acceptor impurity. These results introduce a promising new platform for optically active spin qubits and single-photon sources in ZnSe.
We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
The models presented simulate pumping techniques that can be used on modern semiconductor devices which are capable of coupling a quantum dot and cavity mode in order to determine a more efficient method of producing a single-photon emitter while taking into consideration typical parameters which are achievable given today's standards of coupling strength. Cavity quantum electrodynamics are incorporated in the calculations as we compare various pumping schemes for the system that either use on-resonant laser excitation or nonresonant excitation due to a wetting layer. In particular, we look to study how antibunching effects change for each method as the cavity finesse is increased toward the strong coupling regime. Experimentally these studies are equivalent to nonlinear pump-probe measurements, where a strong pump, either resonant or nonresonant, is used to excite the coupled system, and the resulting state is characterized using a weak, resonant probe beam.
Impurity-bound excitons in II-VI semiconductors are promising optically active solid-state spin qubits that combine exceptional optical quantum efficiency with a low-noise spin environment. Previous studies on single impurities in these materials relied on incoherent optical excitation to generate photons. However, many quantum applications require resonant driving of quantum emitters to precisely control optical transitions and maintain coherence of the emission. Here, we demonstrate coherent optical emission of quantum light from a resonantly driven single impurity-bound exciton in ZnSe. The resonantly driven emitter exhibits bright quantum emission that preserves the phase of the resonant drive. It also features an intensity-dependent nonlinear phase shift at low photon numbers. Resonant excitation enables direct measurement of the Debye-Waller factor, determined to be 0.94, which indicates high efficiency emission to the zero-phonon line. Time-resolved resonance fluorescence measurements reveal a fast optically driven ionization process, along with a slower spontaneous ionization process having a lifetime of 21 μ s due to charge tunneling from the impurity. These results pave the way for coherent generation of quantum light and low-photon-number nonlinear optics through resonant excitation of impurity-bound excitons.
Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by non-resonant and resonant photoluminescence experiments in single QDs [1,2]. Up to now, all the measurements reported in the literature focus on the incoherent photoluminescence signal for achieving single photon emission. In this regime, the linewidth of the photoluminescence spectrum is limited to the so-called radiative limit. In this paper, we report on the resonant emission (RE) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [2]. We present an original type of single photon source based on the coherent laser light scattering by a single QD [3]. Besides the antibunching effect showing the nonclassical nature of the emitted light, we observe that the QD emission spectrum is determined by the spectrum of the resonant excitation laser. Figure (a,b,c) shows high-resolution measurements by Fourier transform spectroscopy of the RE where the data are fitted to the first-order correlation function g(1)(τ) of the RE of a two-level system. The inverse Fourier transform of the g(1)(τ) function allows a direct comparison of the different RE emission profiles in figure (d,e,f). By reducing the resonant excitation power, the Mollow triplet shrinks to a single narrow Lorentzian line, while the relative intensity of this narrow peak increases and tends to overwhelm the RE spectrum. This implies that single QDs can produce single photons with a coherence time that is not limited anymore by the QD electronic properties, resulting in an ultra-coherent character [3]. References [1] P. Michler et al, Science 290, 2282 (2000). [2] H. S. Nguyen et al, Phys. Rev. Lett. (accepted, in press). See arXiv 1109.4304. [3] H. S. Nguyen et al, Appl. Phys. Lett. 99, 261904 (2011).