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Applied Physics Letters

Visible single-photon emission from a nitrogen impurity center in AlAs

Masafumi Jo, Takaaki Mano, Takashi Kuroda, Yoshiki Sakuma, Kazuaki Sakoda

Published Feb 11, 2013• 11 citations
Publisher

Abstract

We report visible single-photon emission from a nitrogen impurity center in AlAs grown on GaAs(001). Sharp emission lines are observed at 2.1–2.2 eV, below the X-conduction bandedge of AlAs from N δ-doped AlAs. The quadratic increase in the photoluminescence intensity with the N concentration reveals that the nitrogen impurity centers consist of NN pairs. Polarization analysis reveals that the peak at 2.191 eV consists of different pair configurations, while the peak at 2.165 eV contains only a single pair configuration along the 〈110〉 direction. Photon correlation measurement gives the second-order correlation function g(2)(0) = 0.33, demonstrating single-photon statistics in emissions from an NN pair.

DOI
10.1063/1.4792315

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We report visible single-photon emission from a nitrogen impurity center in AlAs grown on GaAs(001). Sharp emission lines are observed at 2.1–2.2 eV, below the X-conduction bandedge of AlAs from N δ-doped AlAs. The quadratic increase in the photoluminescence intensity with the N concentration reveals that the nitrogen impurity centers consist of NN pairs. Polarization analysis reveals that the peak at 2.191 eV consists of different pair configurations, while the peak at 2.165 eV contains only a single pair configuration along the 〈110〉 direction. Photon correlation measurement gives the second-order correlation function g(2)(0) = 0.33, demonstrating single-photon statistics in emissions from an NN pair.
We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5, 620.3, 630.7, and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order autocorrelation emission functions, by means of Hanbury-Brown and Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence on the polarization of the excitation radiation with ∼45% contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photophysical properties to the already well-known Si–V and Ge–V emitters, thus, providing results of interest from both the fundamental and applicative points of view.
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The photoluminescence of a single nickel–nitrogen NE8 color center in a diamond nanocrystal is investigated at room temperature under pulsed excitation by scanning confocal optical microscopy. Photon arrival times are analyzed in terms of the temporal intensity correlation function. Antibunching at short times and bunching behavior for longer times is observed, associated with sub- and super-Poissonian statistics, respectively. The behavior is interpreted by a ‘on–off’ state model, and transition rates between these two states are inferred from intensity correlation measurements realized at different excitation powers. NE8 color center photoluminescence quantum yield is evaluated to be 65%, a value higher than achieved for a nitrogen-vacancy color center, which is, up to now, the most practical single emitter to build a reliable single-photon source at room temperature.