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NBN JOSEPHSON AND TUNNEL JUNCTIONS FOR SPACE THZ OBSERVATION AND SIGNAL PROCESSING

Romano Setzu, N. Hadacek, Vincent Larrey, G. Beaudin, Jean-Claude Villégier

Published Jul 13, 2005• 1 citation
OpenAlex

Abstract

ABSTRACT: Active superconducting circuits based on picoseconds switching, i.e. THz oscillating, Josephson tunnel junctions are expected to find a large domain of applications in spatial sub-millimeter wave and FIR detectors as well as in satellite based wideband signal and data processors. In the first case SIS (superconductor-insulator-superconductor) tunnel junctions are required, while in the second case SNS (superconductor-normal metal-superconductor) self-shunted junctions are preferred. We present the advantages of the nitride junction technology currently developed at CEA-Grenoble, based on high-performance MTS (medium temperature superconductor) NbN films in both SIS and SNS junctions. In the SIS case the device performances rely on a sputter deposited and post-annealed, only 0.5-0.7 nm thick, dielectric MgO barrier. This leads to junctions with a Josephson critical current in the range of 10-25 kA/cm, and a large superconducting energy gap (> 5 meV) associated with a low sub-gap quasi-particle leakage current. These parameters are suitable for low “noise temperature ” heterodyne mixers, local oscillators, and integrated receivers in the 0.8 to 1.4 THz frequency range. In the SNS case, a new

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IEEE Transactions on Applied Superconductivity•Mar 1, 2001•21 citations
ABSTRACT: Active superconducting circuits based on picoseconds switching, i.e. THz oscillating, Josephson tunnel junctions are expected to find a large domain of applications in spatial sub-millimeter wave and FIR detectors as well as in satellite based wideband signal and data processors. In the first case SIS (superconductor-insulator-superconductor) tunnel junctions are required, while in the second case SNS (superconductor-normal metal-superconductor) self-shunted junctions are preferred. We present the advantages of the nitride junction technology currently developed at CEA-Grenoble, based on high-performance MTS (medium temperature superconductor) NbN films in both SIS and SNS junctions. In the SIS case the device performances rely on a sputter deposited and post-annealed, only 0.5-0.7 nm thick, dielectric MgO barrier. This leads to junctions with a Josephson critical current in the range of 10-25 kA/cm, and a large superconducting energy gap (> 5 meV) associated with a low sub-gap quasi-particle leakage current. These parameters are suitable for low “noise temperature ” heterodyne mixers, local oscillators, and integrated receivers in the 0.8 to 1.4 THz frequency range. In the SNS case, a new
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.
This thesis describes the development and testing of NbN/MgO/NbN tunnel junctions for use as superconductor-insulator-superconductor (SIS) mixers. SIS mixers are the most sensitive heterodyne detectors in the millimeter wavelength region. Most SIS mixers use Pb alloy tunnel junction. These tunnel junctions have several problems associated with the soft nature of Pb and its low superconducting transition temperature. NbN-based tunnel junctions are being developed to overcome these difficulties. These devices are intended to be used as mixers at millimeter and submillimeter wavelengths. This thesis describes the fabrication process involved in making NbN junctions, and the results of measurements on these devices. The purpose of these measurements is to determine the future possibilities of NbN tunnel junctions as high-frequency mixers. The first chapter is an introduction to SIS mixers and explains how tunnel junction properties affect mixer performance. The basic theory of tunneling and mixing in SIS mixers is first presented. A description of quantum mixer theory is included in this presentation. This theory makes several interesting predictions that cannot be explained using classical theories. This is followed by a description of how real SIS tunnel junctions differ from ideal junctions. The physical origin of these differences is discussed, along with how they affect SIS mixer performance. Finally, the advantages and disadvantages of the various superconducting materials available are discussed. The decision to develop NbN devices is based on these material properties. The second chapter describes the methods used to fabricate small-area NbN/MgO/NbN tunnel junctions. The chapter begins with a description of the various methods that have been used to deposit NbN films. Reactive magnetron sputtering is chosen as the best method for tunnel junction fabrication. Details on the vacuum systems and the methods used for depositing superconducting NbN are discussed. Next, the process used for depositing junction trilayers (NbN/MgO/NbN) is described. The probable growth mode of MgO on NbN is presented. The importance of this growth mode to the junction quality is explained in some detail. Next, standard junction processing steps are reported. The details and limitations of each step are put forth. The standard process allows for the fabrication of 1 [square micron] tunnel junctions. Finally, this chapter discusses several methods of fabaricating submicron junctions that are being pursued. The status of this work is given. The third chapter describes the characterization of NbN films and NbN/Mg0/NbN tunnel junctions. Film properties are described first. The correlation of these properties to deposition conditions is discussed in some detail. Next, values for the various features of the I-V characteristic are given; typical and exceptional values are noted. How these features limit mixer results is described in detail. Several important device attributes were measured using superconducting-quantum-interference-devices (SQUIDs). These attributes are the junction's specific capacitance and the film's magnetic penetration depth. The theory and results of measuring specific capacitance and penetration depth are presented. Following the SQUID results is a large section on RP testing. Mixer tests were made at 205 GHz. The receiver design used, integral inductive tuning circuit used and results are discussed. These results are well understood, with the exception of the temperature dependence of the mixer performance. Finally, measurements of the uniformity of many junctions on a single wafer are presented. The importance of junction uniformity is also described. The final chapter discusses the ultimate limits on NbN mixers, and tells what future work must be done to achieve these limits. The primary high-frequency limit on NbN junctions is the capacitance of NbN/MgO/NbN junctions. The limit imposed by the junction capacitance and circuits used to tune out this capacitance are discussed. Also, the low-frequency limits on NbN junctions are discussed. The status of submicron devices is presented. Junction area is the most immediate limitation on NbN mixer results. The possibility of using other barrier materials to increase the RC speed of NbN junctions is presented. Finally, the possibility of operating NbN junctions at temperatures above 4.2 K is discussed.
We have fabricated both NbN/Ta x N/NbN SN*S-type, NbN/MgO/NbN SIS-type Josephson junctions and microwave band-pass filters on different substrates (Si, Sapphire, MgO). NbN films have been deposited on both sides of (100) oriented, 250 µm thick, MgO substrates with a high crystalline texture quality. The aim was to investigate the performances and the maximum achievable operating frequency in an NbN based RSFQ modulator front-end of an ADC in the 4 K-10 K temperature range. We observed that Ta x N thin films can be tuned from an insulating phase to a superconducting phase (Tc ∼4K) by varying the nitrogen content during sputter deposition while the barrier height of MgO can also be controlled by deposition conditions and by tri-layer postdeposition annealing. Junction properties (Jc∼10-25 kA/cm 2 ), Mac Cumber parameter and RnIc product measured up to 1 mV are shown to be controlled by the reactive sputtering conditions. We have designed three pole band-pass filters and resonators in a micro-strip configuration and studied the junction coupling with the filters. We will show that a sigma-delta NbN technology is a suitable solution for analogue-to-digital conversion in the future generations of telecommunication satellites to achieve high sampling frequency and large bandwidth at high carrier frequency signal.
We have designed, fabricated, and tested terahertz superconductor-insulator-superconductor (SIS) mixers having a self-compensated NbN/AlN/NbN tunnel junction and an epitaxially grown NbN/MgO/NbN microstripline. The junction as a distributed element was 0.8-/spl mu/m wide and 2.4-/spl mu/m long, and its current density was 50 kA/cm/sup 2/. The microstripline consisted of a 200-nm-thick NbN ground plane, a 180-nm-thick MgO insulator, and a 350-nm-thick NbN wiring layer. An investigation of the mixer in our receiver configuration showed flat noise characteristics from 870 to 960 GHz. The lowest receiver noise temperature of about 550 K was obtained at 909 GHz, including a 9-/spl mu/m-thick Mylar beam splitter loss and other optical losses. These characteristics suggest that SIS mixers with self-compensated NbN/AlN/NbN junctions and NbN/MgO/NbN microstriplines are appropriate for used in wideband and low-noise operations at terahertz frequencies.