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ACTA PHOTONICA SINICA

Linear and Nonlinear Refractive Index Changes in Square Tangent Quantum Well

Cheng Li-bing

Published Jan 1, 2007• 0 citations
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Abstract

In the frame of quantum mechanics,the equation to describe the particle motion in Tan2x quantum well is reduced to the hypergeometric equation.The eigenvalue and the eigefunction are obtained by solving the Schrdinger equation.Analytical expressions of linear and the third-order nonlinear optical refractive index changes are obtained in Tan2x quantum well using the density matrix formalism taking into account the intrasubband relaxation.The linear and the third-order nonlinear refractive index changes are calculated.The results show that the refractive index changes depend on the shape of the well,the tunnel bandwith and the optical intensity.Numerical results are presented for a typical GaAs/AlGaAs Tan2x quantum well.

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In the frame of quantum mechanics,the equation to describe the particle motion in Tan2x quantum well is reduced to the hypergeometric equation.The eigenvalue and the eigefunction are obtained by solving the Schrdinger equation.Analytical expressions of linear and the third-order nonlinear optical refractive index changes are obtained in Tan2x quantum well using the density matrix formalism taking into account the intrasubband relaxation.The linear and the third-order nonlinear refractive index changes are calculated.The results show that the refractive index changes depend on the shape of the well,the tunnel bandwith and the optical intensity.Numerical results are presented for a typical GaAs/AlGaAs Tan2x quantum well.
Analytical expressions of linear and third-order nonlinear optical refractive index changes are obtained in Poschl-Teller well using the density matrix formalism taking into account the intrasubband relaxation. Since there are two adjustable parameters κ and λ in the Poschl-Teller well, the shape of the wells will change with the change of the parameters κ and λ, accordingly the linear and the third-order nonlinear refractive index will change with the parameters κ and λ. It is shown that the refractive index changes depends on the shape of the well, the tunnel bandwidth and the optical power. Numerical results are presented for a typical GaAs/AlGaAs Poschl-Teller well.
The linear,nonlinear and total refractive index changes are investigated theoretically in asymmetric double triangular quantum wells.The analytical expressions for the linear and third-order nonlinear refractive index changes are obtained based on the density matrix method and the iterative approach.Numerical calculations are performed for typical GaAs/AlxGa1-xAs asymmetric double triangular quantum wells.The calculated results reveal that a great change of the refractive index can be obtained in the asymmetric coupled quantum wells,and that the incident optical intensity,the structure parameters,and the applied electric field have a great influence on the total refractive index changes.
Linear, nonlinear, and total refractive index changes are investigated theoretically in asymmetric coupled quantum wells. The analytical expressions for the linear and third-order nonlinear refractive index changes are obtained based on the density matrix method and the iterative approach. Numerical calculations are performed for typical GaAs/Al(subscript x)Ga(subscript 1-x)As asymmetric coupled quantum wells. The calculated results reveal that a large variation of the refractive index near the transition energy can be obtained in asymmetric coupled quantum wells, and that the incident optical intensity and the structure parameters, such as the barrier width and the right-well width, have great effects on the total refractive index changes.
Abstract Analytic forms of the changes of the absorption and refractive index associated with intersubband optical transitions in a quantum box are obtained by using the compact density matrix approach. Numerical results are presented for a typical AlGaAs/GaAs quantum box system. The linear, third‐order nonlinear, and total refractive‐index and absorption changes are examined as a function of the incident optical intensity. The results obtained show that the incident optical intensity has a great effect on the total absorption and refractive‐index changes. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Based on the density matrix approach and iterative method, we calculated the analytic forms of linear and third-order nonlinear optical absorption coefficients and refractive index changes for symmetric coupled quantum wells (SCQWs) considering a two-level system, and gave the corresponding numerical results. The calculated results show that the optical properties of SCQWs are significantly better than those of asymmetrically coupled quantum wells, and the optical absorption coefficient and refractive index change are affected by the structure parameters of the SCQWs and the incident optical intensity. Their physical mechanisms are elucidated.
Analytic expression for the linear and third-order nonlinear optical absorption coefficients was obtained in square tangent quantum well by the compact density-matrix method and the iterative procedure. The numerical results for typical GaAs/AlGaAs material show that the well width b,well depth Vo and incident intensity I have great influence on the absorption coefficients and the total optical absorption coefficients are induced with the enhancement of b and the reduction of V_0.It is obtained that the peak absorption shift to the aspect of the low energy.Moreover,the peak of the total optical absorption coefficients is significantly induced and the strong absorption saturation will occur with increasing of the incident intensity.