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Chinese Journal of Luminescence

Linear and Nonlinear Refractive Index Changes in Pöschl-Teller Well

Peng Tan, Hong Lu

Published Oct 1, 2006• 0 citations
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Abstract

Analytical expressions of linear and third-order nonlinear optical refractive index changes are obtained in Poschl-Teller well using the density matrix formalism taking into account the intrasubband relaxation. Since there are two adjustable parameters κ and λ in the Poschl-Teller well, the shape of the wells will change with the change of the parameters κ and λ, accordingly the linear and the third-order nonlinear refractive index will change with the parameters κ and λ. It is shown that the refractive index changes depends on the shape of the well, the tunnel bandwidth and the optical power. Numerical results are presented for a typical GaAs/AlGaAs Poschl-Teller well.

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Analytical expressions of linear and third-order nonlinear optical refractive index changes are obtained in Poschl-Teller well using the density matrix formalism taking into account the intrasubband relaxation. Since there are two adjustable parameters κ and λ in the Poschl-Teller well, the shape of the wells will change with the change of the parameters κ and λ, accordingly the linear and the third-order nonlinear refractive index will change with the parameters κ and λ. It is shown that the refractive index changes depends on the shape of the well, the tunnel bandwidth and the optical power. Numerical results are presented for a typical GaAs/AlGaAs Poschl-Teller well.
In the frame of quantum mechanics,the equation to describe the particle motion in Tan2x quantum well is reduced to the hypergeometric equation.The eigenvalue and the eigefunction are obtained by solving the Schrdinger equation.Analytical expressions of linear and the third-order nonlinear optical refractive index changes are obtained in Tan2x quantum well using the density matrix formalism taking into account the intrasubband relaxation.The linear and the third-order nonlinear refractive index changes are calculated.The results show that the refractive index changes depend on the shape of the well,the tunnel bandwith and the optical intensity.Numerical results are presented for a typical GaAs/AlGaAs Tan2x quantum well.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
Linear, nonlinear, and total refractive index changes are investigated theoretically in asymmetric coupled quantum wells. The analytical expressions for the linear and third-order nonlinear refractive index changes are obtained based on the density matrix method and the iterative approach. Numerical calculations are performed for typical GaAs/Al(subscript x)Ga(subscript 1-x)As asymmetric coupled quantum wells. The calculated results reveal that a large variation of the refractive index near the transition energy can be obtained in asymmetric coupled quantum wells, and that the incident optical intensity and the structure parameters, such as the barrier width and the right-well width, have great effects on the total refractive index changes.
The linear,nonlinear and total refractive index changes are investigated theoretically in asymmetric double triangular quantum wells.The analytical expressions for the linear and third-order nonlinear refractive index changes are obtained based on the density matrix method and the iterative approach.Numerical calculations are performed for typical GaAs/AlxGa1-xAs asymmetric double triangular quantum wells.The calculated results reveal that a great change of the refractive index can be obtained in the asymmetric coupled quantum wells,and that the incident optical intensity,the structure parameters,and the applied electric field have a great influence on the total refractive index changes.
In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.