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Chinese Journal of Quantum Electronics

Calculation of linear and three-order nonlinear optical absorptions in square tangent quantum well

Zhou Li-pin

Published Jan 1, 2013• 0 citations
OpenAlex

Abstract

Analytic expression for the linear and third-order nonlinear optical absorption coefficients was obtained in square tangent quantum well by the compact density-matrix method and the iterative procedure. The numerical results for typical GaAs/AlGaAs material show that the well width b,well depth Vo and incident intensity I have great influence on the absorption coefficients and the total optical absorption coefficients are induced with the enhancement of b and the reduction of V_0.It is obtained that the peak absorption shift to the aspect of the low energy.Moreover,the peak of the total optical absorption coefficients is significantly induced and the strong absorption saturation will occur with increasing of the incident intensity.

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Analytic expression for the linear and third-order nonlinear optical absorption coefficients was obtained in square tangent quantum well by the compact density-matrix method and the iterative procedure. The numerical results for typical GaAs/AlGaAs material show that the well width b,well depth Vo and incident intensity I have great influence on the absorption coefficients and the total optical absorption coefficients are induced with the enhancement of b and the reduction of V_0.It is obtained that the peak absorption shift to the aspect of the low energy.Moreover,the peak of the total optical absorption coefficients is significantly induced and the strong absorption saturation will occur with increasing of the incident intensity.
The optical absorptions coefficients with considering the electron-phonon interaction were theoretically studied in square tangent quantum wells.The wave functions and energy levels are described in square tangent quantum wells by perturbation theory when the polaron effects were considered,and analytic expression for the linear and the third-order nonlinear optical absorption coefficients was obtained by the compact density-matrix method and the iterative procedure.The numerical results for typical GaAs/AlGaAs material showed that the electron-phonon interaction had great influence on the linear,nonlinear and total optical absorption,meanwhile the absorption saturation phenomenon was more obvious than the one without considering the polaron effects.Moreover,the changes of the total optical absorptions increased with the well width b decreasing or the well depth V0 increasing when the electron-phonon interaction was considered.
Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.
By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
In the present study, the effect of the depth of the confinement potential on the nonlinear optical of a GaAs quantum well with short-range bottomless exponential potential is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the linear, third-order nonlinear and total absorption coefficients and relative refractive index changes are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of the depth of the confinement potential. The results show that the linear, third order nonlinear, and total absorption coefficients and relative refractive index changes are strongly affected by the depth of the confinement potential.
Linear and nonlinear optical absorptions in one-dimensional semi-parabolic quantum dot is investigated. The analytical expression of linear and third-order nonlinear optical absorption coefficients are obtained by using compact density-matrix approach and iterative method. Numerical results are presented for an GaAs/AlGaAs quantum dot and the dependence on the quantum confinement of the semi-parabolic quantum dot, the incident optical intensity, and on the relaxation rate are also investigated. The results indicate that the optical absorption coefficients are strongly influenced by the confining frequency, relaxation time, and the incident optical intensity, respectively. However, their influences for the linear optical absorption, third-order nonlinear optical absorption, and the total optical absorption are different. We think our theoretical study may make a great contribution to experimental studies and may open up new opportunities for practical exploitation of the quantum-size effect in optical devices.