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Journal of Foshan University

Optical second-harmonic generation in quantum wells of biased electric-field

Bin Li

Published Jan 1, 2006• 0 citations
OpenAlex

Abstract

The optical second-harmonic generation in quantum wells of biased electric-field is studied.The analytic expression of second-harmonic generation coefficient of this system is derived by means of density matrix approach and the iterative method.The numerical results are presented for a typical GaAs/AlGaAs quantum wells of biased electric-field.The results show that the second-harmonic generation coefficient in this system is over 10 times larger than that in bulk GaAs material and it will change with the change taking place in electric field F.

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The optical second-harmonic generation in quantum wells of biased electric-field is studied.The analytic expression of second-harmonic generation coefficient of this system is derived by means of density matrix approach and the iterative method.The numerical results are presented for a typical GaAs/AlGaAs quantum wells of biased electric-field.The results show that the second-harmonic generation coefficient in this system is over 10 times larger than that in bulk GaAs material and it will change with the change taking place in electric field F.
The optical rectification coefficient in electric-field biased hyperbolic quantum wells was studied. The analytic expression of optical rectification coefficient of this system is derived by means of density matrix approach and the iterative method. Finally, the numerical results were presented for a typical GaAs electric-field biased hyperbolic quantum wells. The results show that the optical rectification coefficient in this system is larger than that in bulk GaAs material and it will change with the change of the parameter a of the quantum well and the applied electric field F.
The effects of a static electric field on the nonlinear optical rectification, second- and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.
By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
The analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients were obtained for general asymmetric quantum well systems using the density matrix formalism.Based on the model,the linear and the third-order nonlinear intersubband optical absorptions in electric-field biased hyperbolic quantum wells were studied.The numerical results were presented for a typical AlxGa1-xAs/GaAs electric-field biased hyperbolic quantum wells.The results show that the contributors to the nonlinear absorption coefficient are due to the electric field,the shape of quantum well and the optical intensity.
Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.
Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.