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Communications in Theoretical Physics

Bound States and the Third Harmonic Generation in an Electric Field Biased Semi-parabolic Quantum Well

Zhang Li, Hong‐Jing Xie

Published Nov 15, 2003• 6 citations
Publisher

Abstract

Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.

DOI
10.1088/0253-6102/40/5/614

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Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.
Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.
By using the compact density matrix approach, the electro-optic effect (EOE) in a semi-parabolic quantum well (QW) with an applied electric field has been theoretically investigated. Via a variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field are obtained. Numerical results on typical GaAs material reveal that the electro-optic effect nearly linearly increases with the increasing of magnitude of the electric field, but it monotonously decreases with the increasing of confining potential frequency of the semi-parabolic QW. The EOE in the model investigated is 10 2 times larger than that in the symmetric parabolic QW under the same electric field and the same frequency of parabolic confining potential, which is due to the self-asymmetry of the system and the electric field effect.
?By using the compact density matrix approach, the electro-optic effect (EOE) in a semi-parabolic quantum well (QW) with an applied electric field has been theoretically investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field are obtained. Numerical results on typical GaAs material reveal that electro-optic effect nearly linearly increases with the increasing of magnitude of the electric field, but it monotonously decreases with the increasing of confined potential frequency of the semi-parabolic QW. The EOE in our model is 102 times larger than that in the symmetric parabolic QW under the same electric field and the same frequency of parabolic confined potential, which is due to the self-asymmetry of the system and the electric field effect.
The third-harmonic generation (THG) in GaAs∕AlGaAs\mathrm{GaAs}∕\mathrm{AlGaAs}GaAs∕AlGaAs cylindrical parabolic quantum wires with an applied static-electric field is studied in detail. An analytic formula for the THG susceptibility in the model is obtained by a compact density matrix approach and an iterative procedure. Finally, the calculated results show the parabolic confinement potential and the applied electric field have great influence on the THG susceptibilities in the system. Another important point is that the maximum THG susceptibility over ${10}^{\ensuremath{-}9}\phantom{\rule{0.3em}{0ex}}{\mathrm{m}}^{2}∕{\mathrm{V}}^{2}$ can be obtained by optimizing the parabolic confinement potential and the applied electric field, which is over ten orders of magnitude greater than in bulk GaAs. The contributors to the very giant three-order nonlinear include the very large dipole transition matrixes and the triple resonant condition.
By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
By using the compact density matrix approach and displacement harmonic variant and numerical calculation methods,the linear and nonlinear intersubband refractive index changes(RICs) in a semi-parabolic quantum well with applied electric field were investigated in detail.Numerical calculations on GaAs were performed for the dependence of RIC on the incident optical intensity,the frequency of confined potential of the semi-parabolic quantum well and the strength of applied electric field.Results reveal that the RICs in the semi-parabolic quantum well system sensitively depend on these factors.