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Journal of Guangdong Polytechnic Normal University

The Third Harmonic Generation in Asymmetrical Quantum Well

Yunbao Zheng

Published Jan 1, 2009• 0 citations
OpenAlex

Abstract

Within the framework of the compact density matrix approach and an iterative method,the third harmonic generation for asymmetrical quantum well are investigated.Finally,the numerical results are presented for a typical GaAs/AlGaAs asymmetric quantum well.The larger third harmonic generation was obtained in this special quantum well.This is a feasible way to get fine nonlinear materials in experiment.

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Within the framework of the compact density matrix approach and an iterative method,the third harmonic generation for asymmetrical quantum well are investigated.Finally,the numerical results are presented for a typical GaAs/AlGaAs asymmetric quantum well.The larger third harmonic generation was obtained in this special quantum well.This is a feasible way to get fine nonlinear materials in experiment.
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Abstrcat The linear and nonlinear susceptibilities had been obtained by the compact-density-matrix approach in presence of the multifrequency incident optical field. An analytic formula for third-harmonic-generation was presented by graphic technology(Feynman). Numerical results were presented for typical GaAs/AlGaAs Morse quantum well. The results showed that third-harmonic-generation increased with the enhancement of a and decreased with relaxation constant increasing. Therefore, if the parameter was increased or the relaxation constant was reduced with the effects on the system associated by environment and other factors limited to minimum,a large third-harmonic-generation coefficient would be obtained.
The optical second-harmonic generation in quantum wells of biased electric-field is studied.The analytic expression of second-harmonic generation coefficient of this system is derived by means of density matrix approach and the iterative method.The numerical results are presented for a typical GaAs/AlGaAs quantum wells of biased electric-field.The results show that the second-harmonic generation coefficient in this system is over 10 times larger than that in bulk GaAs material and it will change with the change taking place in electric field F.
Nonlinear optical rectification effects in an asymmetric quantum well was investigated. Analytical expression of optical rectification coefficient was deduced by using density-matrix method. The larger optical rectification coefficient can be obtained by choosing an appropriate parameter a. The optical rectification coefficient increases with the enhancement of the asymmetry of the quantum well. The larger the asymmetry of quantum well is, the bigger the peak value will be. Moreover, with the increasing of asymmetry of quantum well, the peaks move to the left side of the figure. This is a feasible way to get fine nonlinear materials in experiment.