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Quantum Electronics and Laser Science Conference

Interplay of Rabi oscillation and quantum interference in semiconductor quantum dots

Han Htoon, D. Kulik, Chih-Kang Ken Shih, O. Baklenov, A.L. Holmes, T. Takagahara

Published Jun 25, 2003• 7 citations
Publisher

Abstract

Summary form only given. We present direct experimental evidence of Rabi oscillation (RO) in individual self-assembled quantum dots (SAQDs) and experimental observation of a new quantum interference (QI) phenomenon. Our detailed theoretical investigations attribute this phenomenon to the coherent dynamics resulting from the interplay between RO and QI. We conduct experiments on an In/sub 0.5/Ga/sub 0.5/As SAQD, which can be considered as a three level system To study the interplay of RO and QI, we perform single dot wavepacket interferometry measurements in the strong excitation regime.

DOI
10.1109/qels.2002.1031271

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Summary form only given. We present direct experimental evidence of Rabi oscillation (RO) in individual self-assembled quantum dots (SAQDs) and experimental observation of a new quantum interference (QI) phenomenon. Our detailed theoretical investigations attribute this phenomenon to the coherent dynamics resulting from the interplay between RO and QI. We conduct experiments on an In/sub 0.5/Ga/sub 0.5/As SAQD, which can be considered as a three level system To study the interplay of RO and QI, we perform single dot wavepacket interferometry measurements in the strong excitation regime.
Summary form only given. Semiconductor quantum dots are attracting much interest as a candidate to implement the quantum information processing and the quantum computation. In order to examine the possibility of the quantum state manipulation, we study the excitonic Rabi flopping and a new type of quantum interference phenomena in semiconductor quantum dots. One of the most striking manifestation of the quantum coherence is the Rabi flopping. The observation of the excitonic Rabi splitting in an InGaAs quantum dot was reported recently. Under the strong excitation of an excited exciton state in a single quantum dot, the luminescence from the exciton ground state shows a doublet splitting. This splitting can be interpreted in the dressed exciton picture. Namely, under the strong and resonant excitation of a particular exciton state, the ground state of the system splits into two levels. Then the transition from the exciton ground state to the split ground state results in the doublet structure of the emission spectrum.
A commonly observed quantum-interference phenomenon is Rabi oscillations—understood as a ‘quantum beat’ between two dressed states separated by the Rabi splitting (RS) energy in a driven two-level (artificial) atom [1]. It is a signature of quantum coherence fundamental to the manipulation of atomic qubits in quantum information processing, and has been observed in quantum dots (QDs) (see Ref [2] and references therein). Another quantum-beat phenomenon occurs due to interference between the excited states of a V-type atomic system and has also been observed in the transient decay of QD emission from a suddenly excited neutral exciton state X0—an effective V-type system due to fine-structure splitting (FSS). Despite much related theoretical work and the availability of various platforms in which V-type systems could be realised, the observation of Rabi oscillations in resonance fluorescence from a coherently driven three-level V-type system remains a fundamentally interesting open question. In particular, quantum interference involving both RS and FSS has not been demonstrated experimentally. Here, through detection of time-resolved resonance fluorescence from a QD neutral exciton driven in the Rabi regime (Fig. 1), we experimentally demonstrate triple-slit-type quantum interference in a V-type three-level artificial atom [3]. This result is of fundamental interest in the experimental studies of the properties of V-type systems and may pave the way for further insight into their coherence properties. It also suggests QDs as candidates for multi-path-interference experiments for probing foundational concepts in quantum physics [4]. [1] Haroche, S. & Raimond, J.-M. Exploring the Quantum: Atoms, Cavities, and Photons. OUP Oxford, (2006). [2] Dada, A. C., et al. Optica 3, 493–498 (2016). [3] Dada, A. C., et al. arXiv preprint arXiv:1703.02308 (2017). [4] Sinha, U., Couteau, C., Jennewein, T., Laflamme, R., & Weihs, G. Science 329, 418–421 (2010).
Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field B0B_0B0​ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At B0=2B_0=2B0​=2 T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.
We have investigated Rabi oscillations of exciton polarization in a self-assembled InAs quantum dot ensemble. The four-wave mixing signals measured as a function of the average of the pulse area showed the large in-plane anisotropy and nonharmonic oscillations. The experimental results can be well reproduced by a two-level model calculation including three types of inhomogeneities without any fitting parameter. The large anisotropy can be well explained by the anisotropic dipole moments. We also find that the nonharmonic behaviors partly originate from the polarization interference.