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IEEE Transactions on Applied Superconductivity

Nb-based superconducting tunnel junctions as submillimeter-wave direct detectors

Seiichiro Ariyoshi, Hiroshi Matsuo, Chiko Otani, Y. Satou, Hirohiko M. Shimizu, T. Matsunaga, Takashi Noguchi

Published Jun 1, 2003• 9 citations
Publisher

Abstract

Employing an anodization method into our fabrication process, we have successfully fabricated STJs with size of 4 /spl mu/m in diameter, Josephson critical current density of 1000 A/cm/sup 2/, low leakage current of less than 10 pA at 0.3 K and high fabrication yield of more than 90 percent. These STJs were applied to fabricate submillimeter-wave direct detectors using 12 linearly distributed junctions, each circular junction having a current density of 600 A/cm/sup 2/ and size of 4 /spl mu/m in diameter. Direct detection of submillimeter-waves was measured using a Fourier transform spectrometer, which shows a maximum sensitivity at 440 GHz and a fractional bandwidth of 10 percent.

DOI
10.1109/tasc.2003.814172

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Employing an anodization method into our fabrication process, we have successfully fabricated STJs with size of 4 /spl mu/m in diameter, Josephson critical current density of 1000 A/cm/sup 2/, low leakage current of less than 10 pA at 0.3 K and high fabrication yield of more than 90 percent. These STJs were applied to fabricate submillimeter-wave direct detectors using 12 linearly distributed junctions, each circular junction having a current density of 600 A/cm/sup 2/ and size of 4 /spl mu/m in diameter. Direct detection of submillimeter-waves was measured using a Fourier transform spectrometer, which shows a maximum sensitivity at 440 GHz and a fractional bandwidth of 10 percent.
We have developed submillimeter-wave direct detectors employing niobium-based superconducting tunnel junctions (STJs), with broadband spectral response, high sensitivity and imaging capability. Spectral response peaked at 650 GHz with a fractional bandwidth of 14 percent, which fits one of the important atmospheric windows for an astronomical project. We also confirmed the linearity of the detector response in the dynamic range greater than 10/sup 6/. The measured coupling efficiency was about 0.2, which was lower than the expected value of 0.5. The measured noise current of the detector was 10 fA//spl radic/Hz, which agreed with the shot noise from the residual leakage current of 100 pA at 0.3 K. Resultant noise equivalent power (NEP) is 1.6/spl times/10/sup -16/ W//spl radic/Hz, that is less than the background photon fluctuation limit for ground-based submillimeter-wave observations.
Submillimeter-wave direct detectors employing niobium-based superconducting tunnel junctions(STJs) match the request of broadband spectral response and high sensitivity,and having capability of large format arrays. We aim to realize the fractional bandwidth of 10 percent(60 GHz) at 650 GHz.The broadband coupling was designed using 2 distributed junction(DJ) arrays,which were composed of six STJs connected in parallel by a superconducting microstrip line.By analyze the DJ arrays,we found N-resonance combination needs to connect N-set of twin-junctions with short inductances through(N—1)-long inductances,alternatively.And we got the experiment result at 4.2 K that the center frequency of the STJ is 655 GHz,bandwidth about 50GHz,and the sensitivity is 1A/ W.
We report on the fabrication and properties of high current density NbN/AlN/NbN tunnel junctions for the application of superconducting SIS mixers in the submillimeter wave regions. Junctions having current densities as high as 50 kA/cm/sup 2/ exhibited a good Josephson tunneling behaviour, excellent terahertz response, and sensitive heterodyne mixing properties. Accurate values of junction capacitance were estimated by measuring dc-SQUID resonant steps for the design of tuning circuits. The measured specific capacitance gives values in the range of 20-200 fF//spl mu/m/sup 2/ for the current density range of 1-100 kA/cm/sup 2/. The NbN/AlN/NbN tunnel junctions were integrated with a NbN thin film antenna to investigate the terahertz responses and mixing tests in a quasi-optical testing system. Photon-assisted tunneling steps were clearly observed on the I-V curve with irradiation up to 1.02 THz, and a low-noise heterodyne mixing was demonstrated in the 300-GHz band.
We have fabricated and tested submillimeter-wave superconductor–insulator–superconductor (SIS) mixers using very high-current-density Nb/AlN/Nb tunnel junctions (Jc≈30 kA cm−2). The junctions have low-resistance-area products (RNA≈5.6 Ω μm2), good subgap-to-normal resistance ratios Rsg/RN≈10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that ωRNC=1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlOx/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected double-sideband receiver noise temperature of TRX=110 K at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing rf loss in the tuning circuits.
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).