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International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Direct Detection of THz Signals with an NbN Superconducting Tunnel Junction

Xiao-Fang Shen, Jing Li, Sheng‐Cai Shi

Published Sep 1, 2006• 0 citations
Publisher

Abstract

NbN superconducting tunnel junctions (STJ) have a gap frequency reaching 1.4 THz, although demonstrating relatively large leakage current over Nb ones. In this paper the direct-detection performance of an NbN/AlN/NbN STJ is investigated at 0.5 THz with the aid of a Fourier transform spectrometer.
DOI
10.1109/icimw.2006.368552

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•Jan 1, 2008•0 citations
We are developing a broadband THz detectors using Nb-based superconducting tunnel junctions. We found two components in a current signal for 1-2 THz pulse input. From the comparison of results obtained for the signals, the frequency response for the different size of STJs and the STJs fabricated on different substrate materials, we demonstrate that they correspond to photons absorbed with the superconductor electrode (referred as 'direct' component) and phonons generated by photons absorbed with the substrate (refered as 'phonon-mediated' component).
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
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Superconducting SIS (Superconductor-Insulator-Superconductor) tunnel junctions are promising application prospect in the incoherent detection of astronomy observation. In this paper, the direct detection performances of Nb and NbN based superconducting SIS junctions, which cover about 250 GHz and 140 GHz centered at 600 GHz respectively, are characterized at a bath temperature of 4.2 K. The experiments show that Nb and NbN based SIS junctions have a current shot noise of 2.5×10-12and 3.1×10-12A/radicHz, a current responsivity of 303 and 187 A/W (corresponding to the quantum efficiency of 0.67 and 0.43) respectively. Thus their respective NEPs are 8.4×10-15and 1.7×10-14W/√Hz.
Terahertz direct detectors based on superconducting tunnel junctions (STJs) have the merits of short response time, large dynamic range and relatively high operating temperature, providing a good choice for terahertz detection. Compared with commonly used niobium STJs, niobium nitride (NbN) ones have a high transition temperature close to 16K. Hence they might be useful for terahertz detection operating at temperatures well above the LHe temperature of 4.2K. In this paper, we investigate the properties of NbN STJ detectors at different bath temperatures. Detailed experiment results are given.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.