Iranian Conference on Electrical Engineering

Tunable group delay in a SOI waveguide based on stimulated Raman scattering

Majid Ferdosian, Hassan Kaatuzian

Published Jan 1, 2011• 0 citations

Abstract

We analytically demonstrate the slow down factor enhancement of slow light induced by stimulated Raman scattering in a silicon-on insulator waveguide with a p-i-n Structure. An analytical model is derived for group delay simulation by taking into account of propagation loss and free carrier absorption. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced. Tunable delay time is achievable through applying different bias voltages.

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