Optics Express

Lossless optical modulation in a silicon waveguide using stimulated Raman scattering

Richard Jones, Ansheng Liu, Haisheng Rong, Mario J. Paniccia, Oded M. Cohen, Dani Hak

Published Jan 1, 2005• 78 citations

Abstract

In this paper we describe a new modulation scheme using stimulated Raman scattering in conjunction with a reverse biased p-i-n diode embedded in a silicon waveguide. We show optical modulation of a weak probe beam by modulating the reverse bias voltage of the silicon waveguide excited by a strong pump beam. The probe beam modulation is due to the two-photon absorption-induced carrier density modulation in the waveguide. By tuning the probe wavelength to the Stokes wavelength, we demonstrate for the first time a lossless optical modulator in silicon with modulation speeds up to 80-MHz.

DOI: 10.1364/opex.13.001716

Related papers

Measurement of nonreciprocal stimulated Raman scattering in silicon photonic wires

Michael M. Krause, Jost Müller, E. Brinkmeyer

Nonreciprocal stimulated Raman scattering in a silicon waveguide is shown experimentally for the first time: the measured backward-to-forward transmission ratio is enhanced when a probe laser is tuned to the Stokes wavelength.

IEEE International Conference on Group IV Photonics (GFP)Aug 1, 20124 citations

Tunable group delay in a SOI waveguide based on stimulated Raman scattering

Majid Ferdosian, Hassan Kaatuzian

We analytically demonstrate the slow down factor enhancement of slow light induced by stimulated Raman scattering in a silicon-on insulator waveguide with a p-i-n Structure. An analytical model is derived for group delay simulation by taking into account of propagation loss and free carrier absorption. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced. Tunable delay time is achievable through applying different bias voltages.

Iranian Conference on Electrical EngineeringJan 1, 20110 citations

Design of an optical bit memory based on SRS slow light in SOI waveguide

Majid Ferdosian, Hassan Kaatuzian, Hossein Shokri Kojori

This paper presents a new model for an absorptive-dispersive optical bit memory using stimulated Raman scattering slow-light (SRS). The structure of our model is developed in a low loss silicon-on-insulator (SOI) waveguide based on Stimulated Raman Scattering (SRS). Waveguide has two parts, Raman cell and feedback pass. This model functions as a memory bit and can store an optical pulse by generating a pulse train in the output. Also by using a p-i-n diode structure in Raman cell, the delay time between OB output pulses can be tuned through changing the bias voltage.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEMay 21, 20110 citations

Intensity-tunable group delay using stimulated Raman scattering in silicon slow-light waveguides

Steve Blair, Keke Zheng

We show that stimulated Raman scattering is a sufficiently strong effect in silicon waveguides to allow the intensity of a pump input to control the group delay of a weak Stokes-shifted signal. While the fractional change in group delay is minimal in a straight waveguide, microresonator enhancement can produce a fractional increase of 50% with respect to the linear group delay of the resonator.

Optics ExpressJan 1, 200624 citations

Group Delay Enhancement of SRS Slow-Light in a SOI Waveguide via p-i-n Structure

Hassan Kaatuzian, Majid Ferdosian

We analytically demonstrate the group delay enhancement in a silicon-on-insulator (SOI) waveguide based on stimulated Raman scattering slow-light. This achievement is accomplished by utilizing a p-i-n Structure in the waveguide. An analytical model is derived to simulate the effect of linear propagation loss and free carrier absorption on group. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced.

Symposium on Photonics and OptoelectronicsMay 1, 20110 citations

Two-photon absorption induced stimulated Rayleigh-Bragg scattering

Guang S. He, Paras N. Prasad

A frequency-unshifted and backward stimulated scattering can be efficiently generated in one-photon-absorption free but two-photon absorbing materials. Using a number of novel two-photon absorbing dye solutions as the scattering media and nanosecond pulsed laser as the pump beams, a highly directional backward stimulated scattering at the exact pump wavelength can be readily observed once the pump intensity is higher than a certain threshold level. The spectral and spatial structures as well as the temporal behavior and optical phase-conjugation property of this new type of backward stimulated scattering have been experimentally studied. This stimulated scattering phenomenon can be explained by using a model of two-photon-excitation enhanced standing-wave Bragg grating initially formed by the strong forward pump beam and much weaker backward Rayleigh scattering beam; the partial reflection of the pump beam from this grating provides an positive feedback to the initial backward Rayleigh scattering beam without suffering linear attenuation influence. Comparing to other known stimulated (Raman, Brillouin, Rayleigh-wing, and Kerr) scattering effects, the stimulated Rayleigh-Bragg scattering exhibits the advantages of no frequency-shift, low pump threshold, and low spectral linewidth requirement.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEJan 28, 20051 citation