Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Design of an optical bit memory based on SRS slow light in SOI waveguide

Majid Ferdosian, Hassan Kaatuzian, Hossein Shokri Kojori

Published May 21, 2011• 0 citations

Abstract

This paper presents a new model for an absorptive-dispersive optical bit memory using stimulated Raman scattering slow-light (SRS). The structure of our model is developed in a low loss silicon-on-insulator (SOI) waveguide based on Stimulated Raman Scattering (SRS). Waveguide has two parts, Raman cell and feedback pass. This model functions as a memory bit and can store an optical pulse by generating a pulse train in the output. Also by using a p-i-n diode structure in Raman cell, the delay time between OB output pulses can be tuned through changing the bias voltage.

DOI: 10.1117/12.892271

Related papers

Group Delay Enhancement of SRS Slow-Light in a SOI Waveguide via p-i-n Structure

Hassan Kaatuzian, Majid Ferdosian

We analytically demonstrate the group delay enhancement in a silicon-on-insulator (SOI) waveguide based on stimulated Raman scattering slow-light. This achievement is accomplished by utilizing a p-i-n Structure in the waveguide. An analytical model is derived to simulate the effect of linear propagation loss and free carrier absorption on group. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced.

Symposium on Photonics and OptoelectronicsMay 1, 20110 citations

All-optical slow-light on a photonic chip

Yoshitomo Okawachi, Mark A. Foster, Jay E. Sharping +3 more

We demonstrate optically tunable delays in a silicon-on-insulator planar waveguide based on slow light induced by stimulated Raman scattering (SRS). Inside an 8-mm-long nanoscale waveguide, we produce a group-index change of 0.15 and generate controllable delays as large as 4 ps for signal pulses as short as 3 ps. The scheme can be implemented at bandwidths exceeding 100 GHz for wavelengths spanning the entire low-loss fiber-optics communications window and thus represents an important step in the development of chip-scale photonics devices that process light with light.

Optics ExpressJan 1, 2006167 citations

Tunable group delay in a SOI waveguide based on stimulated Raman scattering

Majid Ferdosian, Hassan Kaatuzian

We analytically demonstrate the slow down factor enhancement of slow light induced by stimulated Raman scattering in a silicon-on insulator waveguide with a p-i-n Structure. An analytical model is derived for group delay simulation by taking into account of propagation loss and free carrier absorption. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced. Tunable delay time is achievable through applying different bias voltages.

Iranian Conference on Electrical EngineeringJan 1, 20110 citations

Long-term all-optical ring fibre memory based on stimulated Raman scattering

Mikhail P. Petrov, Vladimir I. Belotitskii, Evgeny A. Kuzin +1 more

The feasibility of constructing an all-optical dynamic memory based on stimulated Raman scattering (SRS) in a fibre waveguide is discussed. A possible use of an SRS inverter for regeneration of optical signals is considered. Theoretical and experimental investigations are reported of the functional properties of an SRS inverter. The construction and investigation of a prototype all-optical fibre memory with an SRS inverter are described. The repetition frequency of the optical pulses along a fibre loop is 100 MHz and the loop capacity is 500 bits. Pulse circulation is reported over a period of 10 min at an average pump power of 2 W. The response time and the energy requirements of devices with an SRS inverter, and ways of improving their characteristics are considered.

Quantum ElectronicsDec 31, 19950 citations

Slow light in room-temperature optical waveguides

Daniel J. Gauthier

Researchers studying slow light via stimulated Brillouin scattering have demonstrated that it is possible to minimize pulse distortion by tailoring the higher-order dispersion of the material, operate at data rates over 10 Gb/s using broad-band pump light, obtain controllable delays exceeding one pulse width, and delaying pulses with minimal change in the pulse amplitude. Spurred by this work, there is active research in obtaining slow light in optical wave guides by stimulated Raman scattering and by the four-wave mixing process. Also, researchers are moving into the nonlinear regime to study slow-light with optical solitons. Simultaneously, results from the basic science laboratories are transitioning to applications-oriented laboratories who are integrating slow-light sub-assemblies into functions telecommunication components.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)Jun 1, 20070 citations

Lossless optical modulation in a silicon waveguide using stimulated Raman scattering

Richard Jones, Ansheng Liu, Haisheng Rong +3 more

In this paper we describe a new modulation scheme using stimulated Raman scattering in conjunction with a reverse biased p-i-n diode embedded in a silicon waveguide. We show optical modulation of a weak probe beam by modulating the reverse bias voltage of the silicon waveguide excited by a strong pump beam. The probe beam modulation is due to the two-photon absorption-induced carrier density modulation in the waveguide. By tuning the probe wavelength to the Stokes wavelength, we demonstrate for the first time a lossless optical modulator in silicon with modulation speeds up to 80-MHz.

Optics ExpressJan 1, 200578 citations