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IEEE Photonics Technology Letters

Thermal optical bistability in InGaAs/InAlAs MQW etalons at 1.5 mu m wavelength

K. Nonaka, Hitoshi Kawaguchi, Yuichi Kawamura, Hiroyuki Tsuda, Ken-ichi Kubodera

Published Mar 1, 1989• 5 citations
Publisher

Abstract

The authors report on the fabrication of devices assembled in one unit and the observation of thermal optical bistability with low threshold and high reproducibility using the low-energy side of a 1.54- mu m etalon peak. The devices are InGaAs/InAlAs multi-quantum-well (MQW) nonlinear etalons, whose finesse of 20 was obtained by using a SiO/sub 2//TiO/sub 2/ high-reflectivity coating. The authors also show that the nonlinear characteristics depend on the wavelength of the incident light detuned from the etalon peak. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.>

DOI
10.1109/68.87895

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InGaAs-InAlAs multiple quantum well optical bistable devices using the resonant tunneling effect

Yuichi Kawamura, Hiromitsu Asai, Shinji Matsuo +1 more

New types of InGaAs-InAlAs multiple quantum well (MQW) optical bistable devices using the resonant tunneling effect are investigated. The bistability of these devices is obtained by the negative differential resistance (NDR) of the MQW resonant tunneling diodes (RTDs). Two types of MQW bistable devices are described. One is an MQW optical bistable device consisting of an MQW-RTD and an MQW modulator. Light-output-light-input bistable operation is obtained for this device at room temperature. The other is an InGaAs-InAlAs MQW resonant tunneling phototransistor (MQW-RPT), which shows a clear bistability in the collector-current-light-input characteristic. Inverter-type optical bistable operation with an on/off ratio of more than 10 dB is obtained by using the MQW-RPT as a laser driver. Optical memory operation is also demonstrated.>

IEEE Journal of Quantum Electronics•Jan 1, 1992•22 citations
The authors report on the fabrication of devices assembled in one unit and the observation of thermal optical bistability with low threshold and high reproducibility using the low-energy side of a 1.54- mu m etalon peak. The devices are InGaAs/InAlAs multi-quantum-well (MQW) nonlinear etalons, whose finesse of 20 was obtained by using a SiO/sub 2//TiO/sub 2/ high-reflectivity coating. The authors also show that the nonlinear characteristics depend on the wavelength of the incident light detuned from the etalon peak. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.>
Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.
New types of InGaAs-InAlAs multiple quantum well (MQW) optical bistable devices using the resonant tunneling effect are investigated. The bistability of these devices is obtained by the negative differential resistance (NDR) of the MQW resonant tunneling diodes (RTDs). Two types of MQW bistable devices are described. One is an MQW optical bistable device consisting of an MQW-RTD and an MQW modulator. Light-output-light-input bistable operation is obtained for this device at room temperature. The other is an InGaAs-InAlAs MQW resonant tunneling phototransistor (MQW-RPT), which shows a clear bistability in the collector-current-light-input characteristic. Inverter-type optical bistable operation with an on/off ratio of more than 10 dB is obtained by using the MQW-RPT as a laser driver. Optical memory operation is also demonstrated.>