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IEEE Journal of Quantum Electronics

InGaAs-InAlAs multiple quantum well optical bistable devices using the resonant tunneling effect

Yuichi Kawamura, Hiromitsu Asai, Shinji Matsuo, C. Amano

Published Jan 1, 1992• 22 citations

Abstract

New types of InGaAs-InAlAs multiple quantum well (MQW) optical bistable devices using the resonant tunneling effect are investigated. The bistability of these devices is obtained by the negative differential resistance (NDR) of the MQW resonant tunneling diodes (RTDs). Two types of MQW bistable devices are described. One is an MQW optical bistable device consisting of an MQW-RTD and an MQW modulator. Light-output-light-input bistable operation is obtained for this device at room temperature. The other is an InGaAs-InAlAs MQW resonant tunneling phototransistor (MQW-RPT), which shows a clear bistability in the collector-current-light-input characteristic. Inverter-type optical bistable operation with an on/off ratio of more than 10 dB is obtained by using the MQW-RPT as a laser driver. Optical memory operation is also demonstrated.>

DOI: 10.1109/3.119529

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The band edge nonlinear absorption in ZnTe/CdZnTe multiple quantum wells (MQWs) is studied at room temperature. It is found that the exciton absorption peak tends to saturate, broaden and the absorption edge shift to lower energy side with increasing of pump intensities. The optical bistability in ZnTe/CdZnTe MQWs optical bistable device is investigated on transmission at room temperature. The research result indicates that the threshold and contrast ratio for the optical bistability in ZnTe/CdZnTe MQWs optical bistable device are about 292.5 kW/cm2 and 3:1, respectively.

ZnTe/CdZnTe multiple quantum wells (MQWs) optical bistable device has been fabricated, and optical bistability in ZnTe/CdZnTe MQWs optical bistable device is investigated on transmission at room temperature. The research result indicates that the threshold and contrast ratio for the optical bistability in Zn-Te/CdZnTe MQWs optical bistable device are about 363 kW/cm2 and 4:1, respectively. On the basis of the excitonic nonlinear theories, excitonic absorption spectrum in the ZnTe/CdZnTe MQWs obtained here, we attribute the major nonlinear mechanism for the optical bistability to the saturating effect of excitonic absorption.

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