Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Letters

Bistable switching in nonlinear Al0.06Ga0.94As étalons

Olof Sahlén, Eric Masseboeuf, Michael Rask, Nils Nordell, Gunnar Landgren

Published Nov 7, 1988• 15 citations
Publisher

Abstract

Optical bistability at 5 mW input power at 840 nm is reported in Al0.06Ga0.94As étalons grown by metalorganic vapor phase epitaxy, having an epitaxially grown high-reflecting back mirror. The devices have been switched from the high-reflecting to the low-reflecting state with pulses from a laser diode operating at 778 nm with 10 pJ switching energy. The devices could be thermally stable for as long as 200 μs. The experimental results are compared with a simple theoretical model.

DOI
10.1063/1.99780

Related papers

Optical bistability and gating in metalorganic vapor phase epitaxy grown GaAs étalons operating in reflection

Olof Sahlén, Ulf Olin, Eric Masseboeuf +2 more

Nonlinear Fabry–Perot étalons of GaAs have been fabricated with metalorganic vapor phase epitaxy technology. The étalons operate in reflection mode, and have an epitaxially grown, rear dielectric mirror consisting of a stack of alternating AlAs/GaAlAs layers. Optical logic functions using a HeNe laser and optical bistability at room temperature are reported. Low switching powers and improved étalon uniformity are obtained.

Applied Physics Letters•Jun 1, 1987•37 citations

Low-power optical bistability in a thermally stable AlGaAs étalon

Eric Masseboeuf, Olof Sahlén, Ulf Olin +3 more

Optical bistability with 10 mW input power is reported in a thermally stable, nonlinear AlGaAs étalon. A 3-μm-thick silver layer, which serves both as high-reflecting mirror and heat sink, makes it possible to operate the device at arbitrary duty cycles and pulse lengths up to 0.5 s, without any regenerative pulsations, at room temperature. The device operation depends on the plasma-induced electronic nonlinearity, and switching times are typically 10 ns. Device performance is compared with results from a numerical model which takes diffraction, diffusion, and heat conduction into account.

Applied Physics Letters•Jun 5, 1989•13 citations

Low Power Optical Switching In GaAs Epitaxial Etalons

J. L. Oudar, Bruno G. Sfez, Robert Kuszelewicz

Epitaxial methods allow the fabrication of nonlinear interferometric structures which include the mirrors and the nonlinear medium in a single crystal. Optical bistability is observed in these structures at mW optical power. The large excitonic and band-gap resonant nonlinearities of direct-gap semiconductors, such as bulk GaAs or Multiple Quantum Wells (MQW), allow to reach a substantial phase-shift (0.2-0.3 radian) over interaction lengths as small as a few wavelengths. This results in very compact nonlinear microcavities, with typically 5μm overall thickness.

Digest on Nonlinear Optics: Materials, Phenomena and Devices•Jan 1, 1990•0 citations

Bistable optical switching in GaAs multiple-quantum-well epitaxial etalons

J Oudar, Bruno G. Sfez, Robert Kuszelewicz

Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Mar 1, 1991•0 citations

Monolithic GaAs/AlAs optical bistable étalons with improved switching characteristics

Robert Kuszelewicz, J. L. Oudar, J. C. Michel +1 more

Compact bistable GaAs étalons with epitaxial GaAs/AlAs Bragg reflectors have been fabricated by metallorganic vapor phase epitaxy. Their monolithic structure is convenient for further technological steps. It has been found that the good thermal conductivity of the mirror layers allows more efficient heat sinking and leads to improved switching characteristics. A 2:1 contrast ratio and a 20 ns switching time have been obtained in the reflective mode, with a 4 mW threshold power and a strongly reduced dependence of the switch-off threshold upon incident pulse duration.

Applied Physics Letters•Nov 28, 1988•50 citations

Thermally stable optical bistability in an InGaAs/InGaAlAs etalon at 1.5 μm wavelength

David T. Neilson, Jeffrey E. Ehrlich, Andy C. Walker +4 more

The Letter reports the first demonstration of thermally stable, optical bistability in a passive InGaAs/InGaAlAs multiquantum well nonlinear Fabry-Perot etalon at the wavelength 1.5 μm. Critical switch powers of 1 mW were obtained, permitting operation with a CW diode laser source. Switch on/off times of 14 ns/40 ns were observed under slow ramping conditions.

Electronics Letters•Jul 22, 1993•5 citations
Optical bistability at 5 mW input power at 840 nm is reported in Al0.06Ga0.94As étalons grown by metalorganic vapor phase epitaxy, having an epitaxially grown high-reflecting back mirror. The devices have been switched from the high-reflecting to the low-reflecting state with pulses from a laser diode operating at 778 nm with 10 pJ switching energy. The devices could be thermally stable for as long as 200 μs. The experimental results are compared with a simple theoretical model.
Optical bistability with 10 mW input power is reported in a thermally stable, nonlinear AlGaAs étalon. A 3-μm-thick silver layer, which serves both as high-reflecting mirror and heat sink, makes it possible to operate the device at arbitrary duty cycles and pulse lengths up to 0.5 s, without any regenerative pulsations, at room temperature. The device operation depends on the plasma-induced electronic nonlinearity, and switching times are typically 10 ns. Device performance is compared with results from a numerical model which takes diffraction, diffusion, and heat conduction into account.
Epitaxial methods allow the fabrication of nonlinear interferometric structures which include the mirrors and the nonlinear medium in a single crystal. Optical bistability is observed in these structures at mW optical power. The large excitonic and band-gap resonant nonlinearities of direct-gap semiconductors, such as bulk GaAs or Multiple Quantum Wells (MQW), allow to reach a substantial phase-shift (0.2-0.3 radian) over interaction lengths as small as a few wavelengths. This results in very compact nonlinear microcavities, with typically 5μm overall thickness.
Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.
Compact bistable GaAs étalons with epitaxial GaAs/AlAs Bragg reflectors have been fabricated by metallorganic vapor phase epitaxy. Their monolithic structure is convenient for further technological steps. It has been found that the good thermal conductivity of the mirror layers allows more efficient heat sinking and leads to improved switching characteristics. A 2:1 contrast ratio and a 20 ns switching time have been obtained in the reflective mode, with a 4 mW threshold power and a strongly reduced dependence of the switch-off threshold upon incident pulse duration.