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IEEE Transactions on Applied Superconductivity

A 2-kbit superconducting memory chip

Perng-Fei Yuh

Published Jun 1, 1993• 22 citations
Publisher

Abstract

A 2-kb nondestructive readout memory chip has been built using an Nb/AlO/sub x//Nb Josephson-junction process with a 2.5- mu m design rule. A bitmap of 56% functional cells among 1.5 K tested cells, a read access time of 200 ps, an average cycle time of 500 ps without the decoder, and a power dissipation of 1.6 mW including peripheral circuits have been obtained. The decoding time is estimated to be 540 ps. The circuits in this 5-mm by 5-mm, 24-pin chip includes 2 K memory cells, 6-b decoder and drivers, serial-to-parallel and parallel-to-serial converters, and circuits for design of testability or timing measurements. More than 14000 junctions are used on the chip.>

DOI
10.1109/77.257228

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The address decoders, address line drivers, and sense circuits of the fully decoded memory consist of resistor-coupled Josephson logic circuits to realize fast access. The memory cell is constructed from two three-junction symmetric SQUID (superconducting quantum interface device) gates, and a four-flux-quanta storage loop for enabling bipolar current drive. This memory configuration has intrinsic advantages in regard to magnetic flux trapping in address lines and a gate circuit latch-up problem over a DC-powered memory constructed from inductor coupled gates. Individual control and cell circuits were fabricated, using a lead-alloy process, and their operation was verified. A 570-ps read access time is estimated as the sum measured 280-ps decoding time, and calculated 130-ps address line current rising time, 110-ps sense time, and 50-ps signal propagation time. The 1-kb chip is designed to consume 9 mW without voltage regulators.>

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We have designed, simulated, fabricated, and tested a 64-kb hybrid Josephson-CMOS memory using a 5 mm × 5 mm Josephson interface chip and a 2.0 × 1.5 mm CMOS chip. The Josephson chip uses the Hypres 4.5 kA/cm2niobium technology and the CMOS chip is made using the TSMC 65-nm technology. The chips are connected using short wire bonds in a piggy-back package. The chip sizes and pad layouts have been constrained to allow testing in our wideband American Cryoprobe Model BCP-2 test probe to measure ultrashort delays. The test signals of 5-mV amplitude are chosen to represent the signals that would be supplied to the memory in a digital computing or signal processing system. Each input signal is first amplified in a four-junction logic gate driving a Suzuki stack, which, in turn, drives a highly sensitive CMOS comparator that raises the signal to volt level. Such amplifiers are provided for the address, data, read, and write inputs to the CMOS memory. Output currents from the memory cells are detected by ultrafast four-junction logic gates providing 5-mV output signals; an equivalent arrangement was used for the delay tests. The overall read delay is the access time, which we find to be about 400 ps. We extrapolate from the measured and calculated power dissipation in this partially accessed 64-kb memory to a fully accessed 64-kb memory and find the expected overall read power dissipation to be about 12 mW for operation at 1 GHz.

IEEE Transactions on Applied Superconductivity•Nov 28, 2012•90 citations
A 2-kb nondestructive readout memory chip has been built using an Nb/AlO/sub x//Nb Josephson-junction process with a 2.5- mu m design rule. A bitmap of 56% functional cells among 1.5 K tested cells, a read access time of 200 ps, an average cycle time of 500 ps without the decoder, and a power dissipation of 1.6 mW including peripheral circuits have been obtained. The decoding time is estimated to be 540 ps. The circuits in this 5-mm by 5-mm, 24-pin chip includes 2 K memory cells, 6-b decoder and drivers, serial-to-parallel and parallel-to-serial converters, and circuits for design of testability or timing measurements. More than 14000 junctions are used on the chip.>
The address decoders, address line drivers, and sense circuits of the fully decoded memory consist of resistor-coupled Josephson logic circuits to realize fast access. The memory cell is constructed from two three-junction symmetric SQUID (superconducting quantum interface device) gates, and a four-flux-quanta storage loop for enabling bipolar current drive. This memory configuration has intrinsic advantages in regard to magnetic flux trapping in address lines and a gate circuit latch-up problem over a DC-powered memory constructed from inductor coupled gates. Individual control and cell circuits were fabricated, using a lead-alloy process, and their operation was verified. A 570-ps read access time is estimated as the sum measured 280-ps decoding time, and calculated 130-ps address line current rising time, 110-ps sense time, and 50-ps signal propagation time. The 1-kb chip is designed to consume 9 mW without voltage regulators.>
An experimental memory model for investigating the feasibility of a 16K RAM memory with Josephson junctions was fabricated and tested. There are nearly 4500 Josephson junctions in the design which includes array, line drivers, and address decoders. Storage element is a single flux-quantum (SFQ) cell arranged in a 2K array. Drivers and decoders are based on the principle of current steering in superconducting loops, which is a medium speed but low power approach. The measured read-access time of the model is approximately 10 ns. Power dissipation of the unselected chip is zero, whereas for a read/write cycle time of 30 ns, it amounts to about 10 /spl mu/W. Results indicate that a 16K chip is feasible electrically. The estimated access time and power dissipation are 15 ns and 40 /spl nu/W, respectively.
Abstract : Lack of high-density, fast and memory has been a long-standing problem in superconducting digital electronics. Alternative Josephson-junction-based memory cells and peripheral circuits have intrinsic problems which impede the application of that kind of memory. The CMOS-Josephson hybrid memory idea was proposed in 1992 to circumvent this problem. In the present work we have designed and demonstrated a 64-kb CMOS-Josephson hybrid memory working at 1 GHz. In order to make the hybrid idea practical, a complete and comprehensive 4 K short-channel CMOS model for digital circuits was developed for this dissertation. It has been used in the design of the memory core and peripheral circuits. A fast hybrid interface circuit that transforms single-flux-quantum millivolt 2-ps pulse signals to CMOS volt-level signals has been studied and the optimized design has been completed. Using a nonvolatile cryogenic 3-T DRAM cell, the memory core is designed in such a way that the access time is much less than for room-temperature operation, not only because of the performance upgrade due to the temperature decrease but also because of a different reading mechanism. Fabricated by commercial submicron CMOS processes (0.25 microns and 0.18 microns) and a Nb/AlOx/Nb Josephson-junction process with 2.5 kA/cm2 tunneling current density, the memory chips were bonded together by direct wire-bonding and by flip-chip bump-bonding and tested at low frequencies, high frequencies, respectively. A subnanosecond access time is obtained both from simulations and experiments. The power for an interface circuit is measured to be 0.6 mW. The memory core consumes even less power. The total power consumption depends on the operation mode of the memory and is calculated to be 10 mW for reading and 28 mW for writing. Simulations also indicate that, with more advanced semiconductor and superconductor technologies, larger and faster hybrid memories are expected to be achievable in the future.
A 1-GHz-clock Josephson microcomputer system was developed to demonstrate the possibility of a high-speed superconducting computer system. It consists of a 4-b data processor chip and a 1-kb RAM chip. For the fabrication of these Josephson integrated circuits, a cross-shaped Nb-AlO/sub x/-Nb Josephson junction process was developed in order to realize small junction size and improve critical current uniformity, and has made fabrication of LSIs with several thousand gates possible. A latchup-free DC flip-flop is an important element in the high-speed Josephson logic and memory circuits, having been applied to an all-DC-powered Josephson RAM with asynchronous access capability. A low-inductance chip-to-chip carrier is an architectural and design concept for the Josephson computer's 1-GHz-clock operation, suppressing the crosstalk between the AC power and the output signals. Each chip is 7 mm square and is fabricated using a 2.5- mu m-rule Nb-AlO/sub x/-Nb junction process. The chips are connected on a superconducting carrier by solder bumps in a die size of 15 mm by 25 mm. The system is constructed from 8123 Josephson interferometer devices and is operable in a 1-ns cycle with 50-mW power dissipation.
We have designed, simulated, fabricated, and tested a 64-kb hybrid Josephson-CMOS memory using a 5 mm × 5 mm Josephson interface chip and a 2.0 × 1.5 mm CMOS chip. The Josephson chip uses the Hypres 4.5 kA/cm2niobium technology and the CMOS chip is made using the TSMC 65-nm technology. The chips are connected using short wire bonds in a piggy-back package. The chip sizes and pad layouts have been constrained to allow testing in our wideband American Cryoprobe Model BCP-2 test probe to measure ultrashort delays. The test signals of 5-mV amplitude are chosen to represent the signals that would be supplied to the memory in a digital computing or signal processing system. Each input signal is first amplified in a four-junction logic gate driving a Suzuki stack, which, in turn, drives a highly sensitive CMOS comparator that raises the signal to volt level. Such amplifiers are provided for the address, data, read, and write inputs to the CMOS memory. Output currents from the memory cells are detected by ultrafast four-junction logic gates providing 5-mV output signals; an equivalent arrangement was used for the delay tests. The overall read delay is the access time, which we find to be about 400 ps. We extrapolate from the measured and calculated power dissipation in this partially accessed 64-kb memory to a fully accessed 64-kb memory and find the expected overall read power dissipation to be about 12 mW for operation at 1 GHz.