Journal of the Optical Society of America B

Population relaxation induced by the Boson peak mode observed in optical hyperfine spectroscopy of ^167Er^3+ ions doped in a silicate glass fiber

Daisuke Hashimoto, Kaoru Shimizu

Published Aug 24, 2011• 4 citations

Abstract

We demonstrate transient saturation spectroscopy for 167Er3+ ions doped in a silicate glass fiber cooled at 2.5–30 K to measure the population relaxation time t1 of the hyperfine sublevels. The observed t1 value is 3.1 ms at 4 K and we observe anomalous temperature dependence whereby t1 becomes rather longer with heating from 4 to 30 K. We can regard the population relaxation as a result of the Raman scattering of the Boson peak mode (BPM) peculiar to a silicate glass by the 4f-electrons of the 167Er3+ ions. We can attribute the anomalous temperature dependence to the suppression of the Raman scattering by thermal hopping of the localized BPM.

DOI: 10.1364/josab.28.002227

Related papers

Transient Saturation Spectroscopy for measuring the lifetime of hyperfine sublevels in 167Er3+ ions doped in a silicate glass fiber

Daisuke Hashimoto, Kaoru Shimizu

We report our observation of the high population relaxation rate β of hyperfine sublevels in167Er3+ions doped in a silicate glass fiber (EDF). In contrast to the case with a crystalline Y2SiO5host, we observed that the β value became two orders higher at 4 K. Furthermore, we observed the decrease in the β value with respect to the increase in the temperature from 4 K to 20 K.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)May 1, 20110 citations

Investigating the Properties of Glasses Using High Resolution Spectroscopy of Er3+ Ions

Daisuke Hashimoto, Kaoru Shimizu

NTT technical reviewSep 1, 20141 citation

Investigations of population relaxation properties of hyperfine sublevels in 167Er3+ ions doped in a Y2SiO5 crystal

Daisuke Hashimoto, Kaoru Shimizu

We have established the lifetime t1of the hyperfine sublevels of167Er3+ions in Y2SiO5using spectral hole burning, measuring it as 37.8 + 8.9 ms at 2.25 K. Its temperature dependence varies as (1/T)n(n ~ 3).

Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)Jun 1, 20130 citations

Temperature dependence of the homogeneous width of Eu3+ spectral lines in silicate glass measured by accumulated photon echoes

Ryuzi Yano, Masaharu Mitsunaga, Naoshi Uesugi +1 more

Physical review. B, Condensed matterOct 1, 199423 citations

Stark-level one-phonon dephasing process of Nd3+ -doped silicate glass fiber studied with accumulated photon echoes

Ryuzi Yano, Naoshi Uesugi

Physical review. B, Condensed matterMar 1, 19976 citations

Photon echo of an ultranarrow optical transition of 167Er3+ in 7LiYF4 crystals

Mansur M. Minnegaliev, E. I. Baibekov, K. I. Gerasimov +3 more

Quantum ElectronicsSep 1, 201714 citations

Journal of the Optical Society of America B

Population relaxation induced by the Boson peak mode observed in optical hyperfine spectroscopy of ^167Er^3+ ions doped in a silicate glass fiber

Daisuke Hashimoto, Kaoru Shimizu

Published Aug 24, 2011• 4 citations

Publisher

Abstract

DOI: 10.1364/josab.28.002227

Related papers

Transient Saturation Spectroscopy for measuring the lifetime of hyperfine sublevels in 167Er3+ ions doped in a silicate glass fiber

Daisuke Hashimoto, Kaoru Shimizu

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)May 1, 20110 citations

Investigating the Properties of Glasses Using High Resolution Spectroscopy of Er3+ Ions

Daisuke Hashimoto, Kaoru Shimizu

We have been investigating hyperfine sublevels of 67 Er 3+ ions doped in a silicate glass fiber with the objective of demonstrating quantum memory in the .5-µmtelecommunication band.Memory time is determined by the stability of hyperfine sublevels (the lifetime) of 67 Er 3+ ions, so it is therefore necessary to clarify the lifetime properties.This article describes (i) the anomalous temperature dependence of the lifetime that was unexpectedly discovered in the lifetime measurements and (ii) the physical properties of glass that resulted in the anomalous phenomenon.We have been investigating hyperfine sublevels of 67 Er 3+ ions doped in a silicate glass fiber with the objective of demonstrating quantum memory in the .5-µmtelecommunication band.Memory time is determined by the stability of hyperfine sublevels (the lifetime) of 67 Er 3+ ions, so it is therefore necessary to clarify the lifetime properties.This article describes (i) the anomalous temperature dependence of the lifetime that was unexpectedly discovered in the lifetime measurements and (ii) the physical properties of glass that resulted in the anomalous phenomenon.

NTT technical reviewSep 1, 20141 citation

Investigations of population relaxation properties of hyperfine sublevels in 167Er3+ ions doped in a Y2SiO5 crystal

Daisuke Hashimoto, Kaoru Shimizu

Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)Jun 1, 20130 citations

Temperature dependence of the homogeneous width of Eu3+ spectral lines in silicate glass measured by accumulated photon echoes

Ryuzi Yano, Masaharu Mitsunaga, Naoshi Uesugi +1 more

The temperature-dependent homogeneous width of the $^{5}$ ${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$ ${\mathit{F}}_{0}$ transition of ${\mathrm{Eu}}^{3+}$ in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to ${\mathit{T}}^{2}$ (T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of ${\mathrm{SiO}}_{4}$ tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous ${\mathit{T}}^{2}$ dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.The temperature-dependent homogeneous width of the $^{5}$${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$${\mathit{F}}_{0}$ transition of ${\mathrm{Eu}}^{3+}$ in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to ${\mathit{T}}^{2}$ (T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of ${\mathrm{SiO}}_{4}$ tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous ${\mathit{T}}^{2}$ dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.

Physical review. B, Condensed matterOct 1, 199423 citations

Stark-level one-phonon dephasing process of Nd3+ -doped silicate glass fiber studied with accumulated photon echoes

Ryuzi Yano, Naoshi Uesugi

Measurements of the homogeneous width of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ , $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ ${\mathrm{\ensuremath{-}}}^{4}$ ${\mathrm{I}}_{9\mathrm{/}2}$ transition of ${\mathrm{Nd}}^{3+}$ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of ${\mathrm{Nd}}^{3+}$ . These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ and $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.Measurements of the homogeneous width of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ , $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ ${\mathrm{\ensuremath{-}}}^{4}$ ${\mathrm{I}}_{9\mathrm{/}2}$ transition of ${\mathrm{Nd}}^{3+}$ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of ${\mathrm{Nd}}^{3+}$ . These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ and $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.

Physical review. B, Condensed matterMar 1, 19976 citations

Photon echo of an ultranarrow optical transition of 167Er3+ in 7LiYF4 crystals

Mansur M. Minnegaliev, E. I. Baibekov, K. I. Gerasimov +3 more

The longitudinal and transverse relaxation times for a transition between hyperfine sublevels of the lower electronic states of the 4 I 15/2 and 4 I 9/2 multiplets of 167 Er 3+ ions in 7 LiYF 4 crystals have been determined for the first time using two-pulse and stimulated photon echo measurements in zero magnetic field at a temperature of 4 K. The decay of the photon echo signal has been shown to be modulated, which is tentatively attributed to the superhyperfine interaction of the 167 Er 3+ ions with their 19 F − nearest neighbours. The contributions of various types of interaction to the ultranarrow linewidth (~24 MHz) of the transition in question are discussed. Our results demonstrate that this optical transition of the 167 Er 3+ ion in 7 LiYF 4 crystals is potentially attractive for use in Raman quantum memory schemes.The longitudinal and transverse relaxation times for a transition between hyperfine sublevels of the lower electronic states of the 4 I 15/2 and 4 I 9/2 multiplets of 167 Er 3+ ions in 7 LiYF 4 crystals have been determined for the first time using two-pulse and stimulated photon echo measurements in zero magnetic field at a temperature of 4 K. The decay of the photon echo signal has been shown to be modulated, which is tentatively attributed to the superhyperfine interaction of the 167 Er 3+ ions with their 19 F − nearest neighbours. The contributions of various types of interaction to the ultranarrow linewidth (~24 MHz) of the transition in question are discussed. Our results demonstrate that this optical transition of the 167 Er 3+ ion in 7 LiYF 4 crystals is potentially attractive for use in Raman quantum memory schemes.

Quantum ElectronicsSep 1, 201714 citations

The temperature-dependent homogeneous width of the

^{5}

${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$

{\mathit{F}}_{0}

transition of

{\mathrm{Eu}}^{3+}

in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to

{\mathit{T}}^{2}

(T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of

{\mathrm{SiO}}_{4}

tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous

{\mathit{T}}^{2}

dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.

Measurements of the homogeneous width of the

^{4}

{\mathrm{G}}_{5\mathrm{/}2}

^{2}

{\mathrm{G}}_{7\mathrm{/}2}

${\mathrm{\ensuremath{-}}}^{4}$

{\mathrm{I}}_{9\mathrm{/}2}

transition of

{\mathrm{Nd}}^{3+}

in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of

{\mathrm{Nd}}^{3+}

. These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the

^{4}

{\mathrm{G}}_{5\mathrm{/}2}

and

^{2}

{\mathrm{G}}_{7\mathrm{/}2}

states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.