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Physical review. B, Condensed matter

Stark-level one-phonon dephasing process of Nd3+ -doped silicate glass fiber studied with accumulated photon echoes

Ryuzi Yano, Naoshi Uesugi

Published Mar 1, 1997• 6 citations
Publisher

Abstract

Measurements of the homogeneous width of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ , $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ ${\mathrm{\ensuremath{-}}}^{4}$ ${\mathrm{I}}_{9\mathrm{/}2}$ transition of ${\mathrm{Nd}}^{3+}$ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of ${\mathrm{Nd}}^{3+}$ . These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the $^{4}$ ${\mathrm{G}}_{5\mathrm{/}2}$ and $^{2}$ ${\mathrm{G}}_{7\mathrm{/}2}$ states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (4.2 K) and ${\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}$ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.

DOI
10.1103/physrevb.55.5712

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Measurements of the homogeneous width of the 4^{4}4 G5/2{\mathrm{G}}_{5\mathrm{/}2}G5/2​ , 2^{2}2 G7/2{\mathrm{G}}_{7\mathrm{/}2}G7/2​ \ensuremath−4{\mathrm{\ensuremath{-}}}^{4}\ensuremath−4 I9/2{\mathrm{I}}_{9\mathrm{/}2}I9/2​ transition of Nd3+{\mathrm{Nd}}^{3+}Nd3+ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of Nd3+{\mathrm{Nd}}^{3+}Nd3+ . These dephasing processes differ from the commonly observed processes of rare-earth ion-doped glasses: the local-configurational-change-induced dephasing process and the Raman process with low-frequency modes. The densely distributed Stark levels of the 4^{4}4 G5/2{\mathrm{G}}_{5\mathrm{/}2}G5/2​ and 2^{2}2 G7/2{\mathrm{G}}_{7\mathrm{/}2}G7/2​ states are responsible for one-phonon processes. The transition-wavelength dependences of the homogeneous widths \ensuremathΓh{\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}\ensuremathΓh​ (4.2 K) and \ensuremathΓh{\mathrm{\ensuremath{\Gamma}}}_{\mathrm{h}}\ensuremathΓh​ (T\ensuremath{\rightarrow}0) are explained by using the one-phonon process model.
The temperature-dependent homogeneous width of the 5^{5}5${\mathit{D}}_{0\mathrm{\ensuremath{-}}}^{7}$F0{\mathit{F}}_{0}F0​ transition of Eu3+{\mathrm{Eu}}^{3+}Eu3+ in a pure silicate glass fiber has been measured by accumulated photon echoes between 1.6 and 44 K. The temperature dependence of the homogeneous width shows a crossover from T-linear (T7 K) to T2{\mathit{T}}^{2}T2 (T>7 K). The whole temperature dependence of the homogeneous width between 1.6 and 44 K can be explained by the configurational changes of the glass which is modeled by two-level systems (TLS's) and a Raman process involving low-frequency vibrational modes of the silicate glass (the rotations of SiO4{\mathrm{SiO}}_{4}SiO4​ tetrahedra). The T-linear temperature dependence is attributed to the TLS process. The anomalous T2{\mathit{T}}^{2}T2 dependence down to 10 K cannot be explained by only one process, but can be explained by the contributions of both the TLS process and the Raman process. Above 40 K, the Raman process becomes the dominant dephasing mechanism.
Accumulated photon echoes were used to measure the dephasing time (T2{\mathit{T}}_{2}T2​) of the 4^{4}4I9/2{\mathit{I}}_{9/2}I9/2​${\ensuremath{\rightarrow}}^{4}$G5/2{\mathit{G}}_{5/2}G5/2​,2{,}^{2},2G7/2{\mathit{G}}_{7/2}G7/2​ transition of Nd3+{\mathrm{Nd}}^{3+}Nd3+ in highly disordered CaF2{\mathrm{CaF}}_{2}CaF2​-YF3{\mathrm{YF}}_{3}YF3​ crystals. T2{\mathit{T}}_{2}T2​ decreased from subnanosecond values for excitation of low-lying Stark levels to subpicosecond values for excitation of high-lying levels. From 9--100 K the measured temperature dependence of the homogeneous linewidth is described by a resonant single-phonon absorption process.
Pulse-propagation phenomena of accumulated photon echo signals was investigated for the F3/24(1)–I9/24 transition of the Nd3+ ion doped with 20 ppm concentration in silicate glass fiber (core diameter of 6 μm) at 4.2 K using an 82 MHz mode-locked dye laser. The intensity of the transmitted probe pulses from the Nd3+ fiber was measured as a function of the Nd3+ fiber length. The fiber length for the maximum probe-pulse intensity induced by the pump pulses was determined to be 4 m when the pump pulses of 0.50 mW average power and the probe pulses of 0.25 mW average power were used. We derived the pulse area equations which take into account the coherent interaction between the pulses and the Nd3+ fiber. The fiber-length dependence of the signal intensity was explained well by the pulse area equations.
Accumulated photon echoes have been used to investigate the mechanisms of optical dephasing in CaF2 crystals activated by Nd3+ ions. Tunable picosecond laser radiation, which permits the selective excitation of various Nd3+ optical centers in the 4 I 9/2→4 G 5/2, 2 G 7/2 transition, is used. The optical phase relaxation times measured at temperatures from 9 to 50 K permit determination of the homogeneous widths of the transitions between the low-lying 4 I 9/2 Stark level and three excited 4 G 5/2, 2 G 7/2 levels, and calculation of the constants of the inter-Stark relaxation transitions in the ground and excited multiplets for the rhombic N and M Nd3+ centers in CaF2 crystals. An analysis of the temperature dependence of the homogeneous linewidth of the transitions between low-lying Stark levels of the ground and excited states shows that the mechanism of optical dephasing in the crystals investigated is described well by direct relaxation processes with resonant inter-Stark absorption of one phonon in the ground and excited states. At T=9 K, the homogeneous linewidth Γh in CaF2 crystals is almost an order of magnitude smaller than Γh in disordered CaF2-YF3 crystals. This difference can be attributed to the significantly greater spectral phonon density of states in disordered crystals.
Accumulated photon echoes (APE) were used to measure the dephasing rates of Nd3+ in various inorganic glasses as a function of excitation wavelength, sample temperature, and laser power. Although dephasing processes of optical transitions in solids are of considerable interest, they are poorly understood, largely due to the lack of experimental data on femtosecond and picosecond time scales. The APE technique using sub-picosecond laser sources has made it possible to measure in the time domain dephasing rates of inhomogeneously broadened transitions in amorphous systems.1,2