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Optics Letters

All-optical data switching in an optical-fiber link using a GaAs optical bistable device

Thirumalai Venkatesan, Paul J. Lemaire, B. Wilkens, L. Soto, Jack L. Jewell, H. M. Gibbs, Arthur C. Gossard, W. Wiegmann, S. S. Tarng

Published Jul 1, 1984• 19 citations
Publisher

Abstract

We demonstrate the potential for all-optical processing of data transmitted over single-mode fibers using a bistable optical device (BOD). A stream of clock/bias pulses transmitted over a 1-km-long single-mode fiber (SMF) is processed by a pseudorandom data sequence of picosecond pulses transmitted over another 1-km SMF with the help of an optical bistable device. The processed signal from the BOD is transmitted over another kilometer of SMF and detected. The bistable device is an ~3-microm-thick molecular-beam epitaxially grown multiple-quantum-well structure of GaAs and GaAlAs. The clock pulses (at wavelength lambda = 870.0 nm) are just below the threshold for switching on the device, and the switching is accomplished by a pseudorandom data sequence of picosecond pulses (at lambda = 835.0 nm). The pulse width of the data transposed onto the clock stream by the BOD can be controlled by varying the phase of the switching data with respect to the clock, which may be of importance in interle aving data for time-division multiplexing. The experiment also demonstrates the potential of a BOD's capability of switching information from one wavelength to another. With optimized devices regeneration should be possible with reasonable gain.

DOI
10.1364/ol.9.000297

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We demonstrate the potential for all-optical processing of data transmitted over single-mode fibers using a bistable optical device (BOD). A stream of clock/bias pulses transmitted over a 1-km-long single-mode fiber (SMF) is processed by a pseudorandom data sequence of picosecond pulses transmitted over another 1-km SMF with the help of an optical bistable device. The processed signal from the BOD is transmitted over another kilometer of SMF and detected. The bistable device is an ~3-microm-thick molecular-beam epitaxially grown multiple-quantum-well structure of GaAs and GaAlAs. The clock pulses (at wavelength lambda = 870.0 nm) are just below the threshold for switching on the device, and the switching is accomplished by a pseudorandom data sequence of picosecond pulses (at lambda = 835.0 nm). The pulse width of the data transposed onto the clock stream by the BOD can be controlled by varying the phase of the switching data with respect to the clock, which may be of importance in interle aving data for time-division multiplexing. The experiment also demonstrates the potential of a BOD's capability of switching information from one wavelength to another. With optimized devices regeneration should be possible with reasonable gain.
The gain characteristics of strained layer InGaAs quantum well laser amplifiers grown on GaAs substrates have been characterized using a Ti-sapphire laser in both CW and self-mode- locked configuration. All-optical bistability was achieved in such a device through the nonlinear refractive index that arises as a result of the gain saturation of the diode amplifier at high optical intensities. The Ti-sapphire laser was modified to produce wavelength tunable pulses of the order of 150 fs with a 15 nm spectral bandwidth in order to measure the dynamics of the gain using a time resolved optical pump-probe technique. The gain saturation occurs on the time scale of the pulse width of the laser and the initial recovery is extremely fast. This initial speedy recovery on a time scale of 100 fs is followed by a slower recovery with a time constant of 3 ps followed by a much slower recovery of 500 ps.
Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.
In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.
The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.
This paper addresses the concept of active optical processing, in which signals are processed due to a nonlinear transfer function (light output as a function of light input). The particular active device considered here is a bistable optical device (BOD), which typically has transfer curves such as those shown in Fig. 1. Devices whici have transfer functions such as these can be used fc,-- signal enhancement, optical logic, memories, and switching. The aim of developing active optical processing is to achieve high speed all-optical operation, which is not limited by electron transit time considerations. An all-optical processor should have psec response times. In addition, the all-optical nature means freedom from emi, rfi, cross-talk and security, which are also characteristics of optical fibers.