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Journal of Lightwave Technology

Gigabit pulse position bistability in semiconductor lasers

Dominic F. G. Gallagher, Ian H. White, J.E. Carroll, Richard G. S. Plumb

Published Jan 1, 1987• 13 citations
Publisher

Abstract

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.

DOI
10.1109/jlt.1987.1075426

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 1, 1991•1 citation
The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.
A new form of optical Instability in semiconductor-injection lasers is reported in which the position of the optical pulse, generated by a gain switched laser, can take one of two stable positions within a clock cycle. Unlike some forms of optical bistability,1–3 the contrast ratio between the light levels for the two states is high (>20 dB). The optical power required to trigger from one state to the other is typically a few percent of the laser output power, and the duration of the trigger pulse needs be only a fraction of the clock cycle. Trigger energies can, therefore, be in the femtojoule range. Both electrical and optical trigger mechanisms are discussed.
It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.
Optical bistability in semiconductor laser amplifiers is particularly interesting because of the gain provided by the device. Small changes, in input power can result in large changes in amplifier gain, and this leads to possible applications in all-optical regenerators for transmission systems. Other possible applications include their use as optical switches and logic elements.1 Optical bistability in GaAs laser amplifiers operating at 850 nm has been reported previously.2 Here we report for the first time measured results at 1.5 μm with an InGaAsP device.
Nonlinear semiconductor waveguides are investigated with respect to their use for optical bistability and temporal optical switching with results given for silicon-on-sapphire devices. The performance of the waveguides is assessed with comparisons to nonlinear Fabry-Perot cavities, and the conditions for optical bistability are theoretically shown to be possible by combining a waveguide and a diffraction-grating coupler. Structures experimentally investigated include semiconductor layers epitaxially grown on substrates having low refractive indices. Optical switching is reported on reflected or transmitted beams and on the guided-wave intensity by means of excitation pulses in the nanosecond or picosecond range. The data confirm the usefulness of nonlinear waveguides as alternative devices for temporal optical switching and logic-gate development in part due to their good switching times.