Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Transient responding characteristics of semiconductor bistable amplifier

Tingwan Wu, Zhaosheng Zhu

Published Oct 19, 2001• 0 citations

Abstract

In this paper we present the results of theoretical analysis and numerical analogue on the transient characteristics of a semiconductor system responding to the incident signal field, especially for the situations in which the system is with lasing effect and display a novel increasing absorption bistable state. The results appear some different features with that of other known bistable device and lasers. These results may be available to a class of excitonic bistable lasing systems.

DOI: 10.1117/12.444939

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