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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

New results on bistability and instability of semiconductor amplifier

Tingwan Wu, Zhenglin Li

Published Oct 16, 2001• 0 citations
Publisher

Abstract

In this paper, some new results of the study on the bistability and the instability of semiconductor optical amplifier are presented, which may be expected to be available to a class of excitonic optical bistable and amplifying systems. For these systems, both saturation and increasing absorptive bistability will product, depending on the competition among the interactions in the medium, especially the nonlinear couplings, and the lasing conditions. Particularly, the output curve appears a novel feature of optical hysteresis, with amplifying effect as well. On the other hand, the instability of the stationary states is investigated by linear stability analyzing. Some new phenomena of 'critical slowing down' are discovered near the relevant critical points, in the dynamic responding course.

DOI
10.1117/12.445714

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In this paper, some new results of the study on the bistability and the instability of semiconductor optical amplifier are presented, which may be expected to be available to a class of excitonic optical bistable and amplifying systems. For these systems, both saturation and increasing absorptive bistability will product, depending on the competition among the interactions in the medium, especially the nonlinear couplings, and the lasing conditions. Particularly, the output curve appears a novel feature of optical hysteresis, with amplifying effect as well. On the other hand, the instability of the stationary states is investigated by linear stability analyzing. Some new phenomena of 'critical slowing down' are discovered near the relevant critical points, in the dynamic responding course.
In this paper we present a theoretical analysis on the effects of increasing absorption and amplification of light in the semiconductor optical bistable system, though the results may be available to a class of excitonic OBS. The Heisenberg equations for the motion of excitons and lightfield modes are deduced. By theoretical analyzing and numerical computing, we study the conditions and characteristics of bistability and lasing. The results how that the system displays different bistabilities depending on the relative intensities of varied interactions, a novel hysteresis loop appears even in the lasing region, thought eh increasing absorption restricts the lasing effect.
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Abstract The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an exter- nal laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self- oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. 1. Introduction Stability and instability are two sides of matter which are by no means independent but closely related. For example, in case the system state curve develops three branches, it is the unstable behaviour of the middle branch that causes a jumping up or down to the upper or lower branches thus generating the effect of bistability. Bistable devices them- selves may in turn manifest a rich variety of instabilities leading to spontaneous pulsations of both regular and irregular nature. Since 1987 a fully new direction of research dealing with optical self-pulsing and chaos has been orient- ed by the original works of McCall [l], Bonifacio and Lugiato
We present a fully-quantum-mechanical theory of the intracavity interaction of coherent light with semiconductors. Interaction is assumed to occur via excitons. Using a master-equation approach we include such effects as exciton-lattice and exciton-exciton interactions. In the two cases of high and low exciton densities, steady-state analysis reveals bistability and hysteresis in the system. Bistability of a dispersive and absorptive nature in both exciton number and output intensity, dependent on input intensity is found. The bistability displayed in the high-density case agrees qualitatively with the experimental curves obtained by Gibbs et al. for GaAs. As yet the low-density bistability has not been experimentally observed.