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Physical Review A

Quantum theory of excitonic optical bistability

Moira L. Steyn‐Ross, Crispin W. Gardiner

Published Jan 1, 1983• 47 citations
Publisher

Abstract

We present a fully-quantum-mechanical theory of the intracavity interaction of coherent light with semiconductors. Interaction is assumed to occur via excitons. Using a master-equation approach we include such effects as exciton-lattice and exciton-exciton interactions. In the two cases of high and low exciton densities, steady-state analysis reveals bistability and hysteresis in the system. Bistability of a dispersive and absorptive nature in both exciton number and output intensity, dependent on input intensity is found. The bistability displayed in the high-density case agrees qualitatively with the experimental curves obtained by Gibbs et al. for GaAs. As yet the low-density bistability has not been experimentally observed.

DOI
10.1103/physreva.27.310

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We present a fully-quantum-mechanical theory of the intracavity interaction of coherent light with semiconductors. Interaction is assumed to occur via excitons. Using a master-equation approach we include such effects as exciton-lattice and exciton-exciton interactions. In the two cases of high and low exciton densities, steady-state analysis reveals bistability and hysteresis in the system. Bistability of a dispersive and absorptive nature in both exciton number and output intensity, dependent on input intensity is found. The bistability displayed in the high-density case agrees qualitatively with the experimental curves obtained by Gibbs et al. for GaAs. As yet the low-density bistability has not been experimentally observed.
An exciton-phonon mechanism for producing cavityless optical bistability is suggested. We consider the influence of the oscillating subsystem of a crystal on the absorption process of a laser wave in the region of exciton frequencies. It is shown that exciton-phonon interaction leads to nonlinear dependence of the absorption coefficient on the density of the exciton gas. The increase of absorption with increasing exciton density, however, is possible only in the frequency region on the long-wavelength tail of the exiton band. As a result, the exciton density of the crystal becomes a hysteresis function of external parameters (intensity of the incident wave, temperature, etc.). We calculate the absorption coefficient of excitons and define the frequency and temperature regions where optical bistability may exist. We analyze different relaxation mechanisms of excitons and explain the experimental results of observing optical bistability in different semiconductor crystals.
Abstract Optical bistability (OB) is a phenomenon that describes a light induced phase transition in the non-equilibrium state. It is vital for all-optical computing and communication, serving as the basis for switches, logic gates, transistors, and memory. By enabling two stable light states, OB allows storage and fast switching, making high-speed, energy-efficient data processing possible. In this work we study the phenomenon in a two-band semiconductor in an optical cavity. Starting from a many-body Hamiltonian of optically generated electrons, holes and light-semiconductor interaction and Coulomb electron–electron, hole–hole and electron–hole interactions, we obtain the optical Bloch equations, in the mean field approximation, where relaxation is included phenomenologically. We obtain expressions for particle density, excitonic pair density and output intensity as non-linear functions of input light intensity. All these quantities show bistable behaviour, with two stable phases, and hysteresis in the non-equilibrium state. Equilibrium is ensured by introducing damping terms for the particle density amplitude, excitonic density amplitude, and cavity photon amplitude phenomenologically. The electron–hole pairs increase with light intensity, shows bistable features and then disappears with further increase in the input light intensity. The bistable behaviour becomes pronounced as we pass from low Coulomb interaction strengths to high Coulomb interaction strengths between electrons and holes. For sub-bandgap excitations, the output light versus incident light shows a complex behaviour.
Abstract A joint effect of exciton–phonon and exciton–exciton interactions on optical properties of semiconductors is studied. In these substances the exciton density is shown to be a multivalued function of incident light intensity and the frequency and temperature conditions under which the optical bistability arises are specified. Investigation of nonlinear optical properties of semiconductors with account for the indirect phototransitions exhibits that both multistable optical states and the bistable ones distinguished by a complicated dynamics of the switching may be observed in such systems.
A resonant monochromatic pump laser generates coherent excitons in an n-type-doped semiconductor. Both exciton–exciton and exciton–donor interactions come into play. The former interaction can give rise to the appearance of optical bistability, which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis-loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determinng one of the two parameters of the system, the exciton–donor coupling constant or the donor concentration if the other is known.