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physica status solidi (b)

Optical Bistability and Multistability in a System of High Density Excitons and Biexcitons in Semiconductors

P. I. Khadzhi, G. D. Shibarshina, A. Kh. Rotaru, Yu. D. Slavov

Published Jun 1, 1988• 17 citations
Publisher

Abstract

Abstract Results are given on the investigation of optical bistability and multistability phenomena both, in the exciton range of the spectrum due to exciton‐photon and exciton‐exciton interactions and in the range of two‐photon generation of the biexcitons (excitonic molecules). For each case the steady‐state equations are obtained.

DOI
10.1002/pssb.2221470232

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An investigation is reported of static and dynamic optical bistability and optical switching in a system of coherent excitons and biexcitons in semiconductors subject to the exciton-photon interaction and optical conversion of excitons into biexcitons. The Heisenberg equations of motion for excitons and biexcitons and the wave equation for the field are used to derive a system of nonlinear differential equations describing the dynamic evolution of such a system. The equation of state for a theory of optical bistability is derived for the static case. A study is made of the stability of stationary optical bistability states. A computer experiment is used in an investigation of the switching times between the branches
Abstract A joint effect of exciton–phonon and exciton–exciton interactions on optical properties of semiconductors is studied. In these substances the exciton density is shown to be a multivalued function of incident light intensity and the frequency and temperature conditions under which the optical bistability arises are specified. Investigation of nonlinear optical properties of semiconductors with account for the indirect phototransitions exhibits that both multistable optical states and the bistable ones distinguished by a complicated dynamics of the switching may be observed in such systems.
We present a fully-quantum-mechanical theory of the intracavity interaction of coherent light with semiconductors. Interaction is assumed to occur via excitons. Using a master-equation approach we include such effects as exciton-lattice and exciton-exciton interactions. In the two cases of high and low exciton densities, steady-state analysis reveals bistability and hysteresis in the system. Bistability of a dispersive and absorptive nature in both exciton number and output intensity, dependent on input intensity is found. The bistability displayed in the high-density case agrees qualitatively with the experimental curves obtained by Gibbs et al. for GaAs. As yet the low-density bistability has not been experimentally observed.
Great progress has been made in recent years in experimental studies of excitonic molecules, both in direct-band and indirect-band semiconductors. The exciton systems in these semiconductors differ substantially. In direct-band semiconductors with dipole-allowed optical transitions, the direct-recombination times are extremely small. Consequently the processes of binding of excitons into excitonic molecules and their decay occur under strongly nonequilibrium conditions. Hence one can obtain the fundamental information on biexcitons in these semiconductors by nonlinear optical methods. This review discusses the processes on which the various methods are based: two-photon resonance excitation of biexcitons, induced one-photon conversion of an exciton into a biexciton, two-photon resonance Raman scattering involving biexciton states, etc., and their application to studying biexcitons with the example of CdS. Problems of bistability involving biexcitons are also briefly discussed. In indirect semiconductors, where recombination occurs with the emission of a phonon, the lifetimes of excitons are large, and quasiequilibrium can be established in the exciton system. Under these conditions the information on the properties of the molecules is obtained by analyzing their radiative-decay spectra. The problem of detecting biexcitons in indirect semiconductors, radiative decay of molecules, and the effect on their stability of external electric, strain, and magnetic fields are discussed in detail with the examples of Si and Ge. Also the results of investigating the quantum statistical behavior of a dense gas of spin-oriented excitons (in a magnetic field under conditions in which the biexcitons are destabilized) are briefly presented (using the example of uniaxially compressed germanium), and the question of the possibility of their Bose condensation is discussed.