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physica status solidi (b)

Exciton–Phonon Mechanism of Optical Bistability

Bohdan M. Nitsovich, O. V. Krechivskii, G. M. Pestryakov

Published Dec 1, 1988• 2 citations
Publisher

Abstract

Abstract A joint effect of exciton–phonon and exciton–exciton interactions on optical properties of semiconductors is studied. In these substances the exciton density is shown to be a multivalued function of incident light intensity and the frequency and temperature conditions under which the optical bistability arises are specified. Investigation of nonlinear optical properties of semiconductors with account for the indirect phototransitions exhibits that both multistable optical states and the bistable ones distinguished by a complicated dynamics of the switching may be observed in such systems.

DOI
10.1002/pssb.2221500233

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Abstract A joint effect of exciton–phonon and exciton–exciton interactions on optical properties of semiconductors is studied. In these substances the exciton density is shown to be a multivalued function of incident light intensity and the frequency and temperature conditions under which the optical bistability arises are specified. Investigation of nonlinear optical properties of semiconductors with account for the indirect phototransitions exhibits that both multistable optical states and the bistable ones distinguished by a complicated dynamics of the switching may be observed in such systems.
The nonlinear light transmission of semiconductors, in which the indirect exciton phototransition is realized, is studied. It is shown that the presence of two channels of dissipation of light wave energy of the indirect phototransition (the excitation of libration phonons) and exciton relaxation (the excitation of lattice phonons) -- leads to arising of optical multistable states in crystals. Investigations of polarization peculiarities of the dynamics of nonlinear processes with changing intensity of the input signal have been carried out.
An exciton-phonon mechanism for producing cavityless optical bistability is suggested. We consider the influence of the oscillating subsystem of a crystal on the absorption process of a laser wave in the region of exciton frequencies. It is shown that exciton-phonon interaction leads to nonlinear dependence of the absorption coefficient on the density of the exciton gas. The increase of absorption with increasing exciton density, however, is possible only in the frequency region on the long-wavelength tail of the exiton band. As a result, the exciton density of the crystal becomes a hysteresis function of external parameters (intensity of the incident wave, temperature, etc.). We calculate the absorption coefficient of excitons and define the frequency and temperature regions where optical bistability may exist. We analyze different relaxation mechanisms of excitons and explain the experimental results of observing optical bistability in different semiconductor crystals.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
This paper proposes for consideration an additional mechanism for influencing the exciton absorption spectra and observing temperature redistribution peculiarities of the crystal absorptive power. They are caused by nonlinear phonon-exciton interactions, which are due to anharmonic effects in the exciton-phonon system. The arising of the borderline frequency, which possesses the smallest region of optical bistability realization, is caused by a break in the direction of the absorption curve. At low temperatures the basic role is played by the exciton-exciton interaction, and at high temperatures nonlinear exciton-exciton-phonon processes play the most important role the value of the borderline frequency is defined by the size and sign of the nonlinear exciton-exciton-phonon function as well as by the crystal temperature and the exciton density, which is created by the external powerful laser wave.