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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Temperature variation of optical bistability of a semiconductor

Bohdan M. Nitsovich, V. N. Vivcharyuk, I. M. Grigorashuk

Published Dec 10, 1993• 0 citations
Publisher

Abstract

The effect of the phonon subsystem of a crystal on laser absorption is considered. The exciton- phonon interaction is shown to result in a nonlinear behavior of absorption as a function of exciton gas density. The output light intensity is calculated as a function of temperature and the temperature range in which optical bistability occurs is established.

DOI
10.1117/12.165428

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The effect of the phonon subsystem of a crystal on laser absorption is considered. The exciton- phonon interaction is shown to result in a nonlinear behavior of absorption as a function of exciton gas density. The output light intensity is calculated as a function of temperature and the temperature range in which optical bistability occurs is established.
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This paper proposes for consideration an additional mechanism for influencing the exciton absorption spectra and observing temperature redistribution peculiarities of the crystal absorptive power. They are caused by nonlinear phonon-exciton interactions, which are due to anharmonic effects in the exciton-phonon system. The arising of the borderline frequency, which possesses the smallest region of optical bistability realization, is caused by a break in the direction of the absorption curve. At low temperatures the basic role is played by the exciton-exciton interaction, and at high temperatures nonlinear exciton-exciton-phonon processes play the most important role the value of the borderline frequency is defined by the size and sign of the nonlinear exciton-exciton-phonon function as well as by the crystal temperature and the exciton density, which is created by the external powerful laser wave.
Abstract A joint effect of exciton–phonon and exciton–exciton interactions on optical properties of semiconductors is studied. In these substances the exciton density is shown to be a multivalued function of incident light intensity and the frequency and temperature conditions under which the optical bistability arises are specified. Investigation of nonlinear optical properties of semiconductors with account for the indirect phototransitions exhibits that both multistable optical states and the bistable ones distinguished by a complicated dynamics of the switching may be observed in such systems.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.
We present a fully-quantum-mechanical theory of the intracavity interaction of coherent light with semiconductors. Interaction is assumed to occur via excitons. Using a master-equation approach we include such effects as exciton-lattice and exciton-exciton interactions. In the two cases of high and low exciton densities, steady-state analysis reveals bistability and hysteresis in the system. Bistability of a dispersive and absorptive nature in both exciton number and output intensity, dependent on input intensity is found. The bistability displayed in the high-density case agrees qualitatively with the experimental curves obtained by Gibbs et al. for GaAs. As yet the low-density bistability has not been experimentally observed.