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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

The peculiarities of optical bistability realization in the exciton absorption region of layer semiconductors

Oleksandr V. Derevyanchuk, Claudia Yu. Zenkova, Valeriy M. Kramar, Natallya K. Kramary

Published May 19, 2006• 1 citation
Publisher

Abstract

The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.

DOI
10.1117/12.679949

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The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
The theoretical investigation of the role of bending waves in the process of creating conditions for observing optical bistability in layer semiconductors was performed by the Green function method. Using the 2H-polytype of Pb12 as an example. we showed that effective exciton scattering by oscillations of this type leads to a short wave shift of the frequency tegion. the decrease of its sizes. the widening of the temperature interval optical bistability realization of its observing, the shill the hysteresis loop into bigger intensities and the decrease of its height and width.
The influence of weak external magnetic fields on the conditions of optical bistability (OB) realization in the field of exciton absorption in layer semiconductors has been investigated theoretically. Using the 2H-polytype of PbI2 as an example, it is shown that by changing the intensity of the external magnetic field it is possible to obtain the OB realization region without changing the excitation laser frequency. It is also possible to control effectively the position and size of the hysteresis absorption loop caused by the existence of several exciton zones and due to the peculiar features of the layer crystal structure.
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.