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Optics and Spectroscopy

Magnetooptical bistability of a layered semiconductor in the region of exciton absorption

Claudia Yu. Zenkova, Oleksandr V. Derevyanchuk, Valeriy M. Kramar, N. K. Kramar

Published Feb 1, 2008• 1 citation
Publisher

Abstract

The effect of weak external magnetic fields on the conditions for implementing optical bistability in the region of exciton absorption of layered semiconductors has been theoretically investigated. By the example of the 2 H polytype of lead diiodide, it is shown that, changing the strength of an external magnetic field, one can form conditions for implementing bistability and effectively control the position and sizes of the hysteresis loop of exciton absorption.

DOI
10.1134/s0030400x08020112

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The effect of weak external magnetic fields on the conditions for implementing optical bistability in the region of exciton absorption of layered semiconductors has been theoretically investigated. By the example of the 2 H polytype of lead diiodide, it is shown that, changing the strength of an external magnetic field, one can form conditions for implementing bistability and effectively control the position and sizes of the hysteresis loop of exciton absorption.
The influence of weak external magnetic fields on the conditions of optical bistability (OB) realization in the field of exciton absorption in layer semiconductors has been investigated theoretically. Using the 2H-polytype of PbI2 as an example, it is shown that by changing the intensity of the external magnetic field it is possible to obtain the OB realization region without changing the excitation laser frequency. It is also possible to control effectively the position and size of the hysteresis absorption loop caused by the existence of several exciton zones and due to the peculiar features of the layer crystal structure.
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
The impact of a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2H-polytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external magnetic field intensity has been shown. This effect can be used as a basic guideline in measuring the level of laser radiation signals, and can provide means for metrological maintenance of systems working in different active regime.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
The influence of an external magnetic field on the optical characteristics of the exciton spectra of a semiconductor is studied. It is shown that the diamagnetic shift of the exciton level essentially changes the dynamics of the exciton absorption. The combination of the excitonic and magnetic properties of a crystal in the range of excitonic frequencies gives new opportunities to control the bistable behavior of the crystal. It is revealed that the magnetooptical response of the semiconductor to the laser field gives rise to bistable loops with respect to both the intensity of the incident light and the magnitude of the magnetic field.