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Canadian Journal of Physics

Excitonic optical bistability in n-type-doped semiconductors

Nguyen Ba An, Le Thi Cat Tuong

Published Dec 1, 1992• 0 citations
Publisher

Abstract

A resonant monochromatic pump laser generates coherent excitons in an n-type-doped semiconductor. Both exciton–exciton and exciton–donor interactions come into play. The former interaction can give rise to the appearance of optical bistability, which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis-loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determinng one of the two parameters of the system, the exciton–donor coupling constant or the donor concentration if the other is known.

DOI
10.1139/p92-198

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A resonant monochromatic pump laser generates coherent excitons in an n-type-doped semiconductor. Both exciton–exciton and exciton–donor interactions come into play. The former interaction can give rise to the appearance of optical bistability, which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis-loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determinng one of the two parameters of the system, the exciton–donor coupling constant or the donor concentration if the other is known.
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We present a fully-quantum-mechanical theory of the intracavity interaction of coherent light with semiconductors. Interaction is assumed to occur via excitons. Using a master-equation approach we include such effects as exciton-lattice and exciton-exciton interactions. In the two cases of high and low exciton densities, steady-state analysis reveals bistability and hysteresis in the system. Bistability of a dispersive and absorptive nature in both exciton number and output intensity, dependent on input intensity is found. The bistability displayed in the high-density case agrees qualitatively with the experimental curves obtained by Gibbs et al. for GaAs. As yet the low-density bistability has not been experimentally observed.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
In this paper we present a theoretical analysis on the effects of increasing absorption and amplification of light in the semiconductor optical bistable system, though the results may be available to a class of excitonic OBS. The Heisenberg equations for the motion of excitons and lightfield modes are deduced. By theoretical analyzing and numerical computing, we study the conditions and characteristics of bistability and lasing. The results how that the system displays different bistabilities depending on the relative intensities of varied interactions, a novel hysteresis loop appears even in the lasing region, thought eh increasing absorption restricts the lasing effect.