Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Journal of Quantum Electronics

Proposal and analysis of laser-amplifier-based optical bistable circuit

Kenju Otsuka

Published Jan 1, 1982• 18 citations
Publisher

Abstract

A laser-amplifier-based optical bistable circuit is proposed. Static and dynamic behaviors are analyzed theoretically. Switching transients, pulse comparison, and shaping characteristics, as well as optical memory operations are given, based on the numerical analysis.
DOI
10.1109/jqe.1982.1071374

Related papers

Optical bistability in diode-laser amplifiers and injection-locked laser diodes

Rongqing Hui, Sergio Benedetto, Ivo Montrosset

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OB result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OB can be expected when the laser operates in the injection-locked condition.

Optics Letters•Feb 15, 1993•18 citations

Static and Dynamic Properties of Nonlinear Semiconductor Laser Amplifiers

Nagaatsu Ogasawara, Ryoichi Ito

Optical memory, differential amplification and optical limiting have been experimentally achieved in an AlGaAs laser amplifier, demonstrating the feasibility of nonlinear optical signal processing using semiconductor laser amplifiers. The results of the analysis of the dynamic properties of semiconductor laser amplifiers are also presented; subnanosecond and femto-Joule switching, critical slowing down and output spiking due to self-tuning at the onset of light injection have been analyzed.

Japanese Journal of Applied Physics•Sep 1, 1986•30 citations

Optical Bistability And Switching By Non Inear Waveguiding In Semiconductor Lasers And Laser Amplifiers

John Gerard McInerney, Yuan Li, Theodore C. Salvi +1 more

Bistable optical devices (BODs) are interesting for optical switching, limiting, memory, signal conditioning and logic [1]. Semiconductor-based BODs are especially promising because their large nonlinearities should permit development of compact, rugged and efficient systems. Here we concentrate on active semiconductor BODs and switches, that is those which have internal gain, such as injection lasers and amplifiers.

Digest on Nonlinear Optics: Materials, Phenomena and Devices•Jan 1, 1990•1 citation

Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Rongqing Hui

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>

Journal of Lightwave Technology•Jan 1, 1995•21 citations

Transient responding characteristics of semiconductor bistable amplifier

Tingwan Wu, Zhaosheng Zhu

In this paper we present the results of theoretical analysis and numerical analogue on the transient characteristics of a semiconductor system responding to the incident signal field, especially for the situations in which the system is with lasing effect and display a novel increasing absorption bistable state. The results appear some different features with that of other known bistable device and lasers. These results may be available to a class of excitonic bistable lasing systems.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Oct 19, 2001•0 citations

Optical bistability in active distributed—feedback structures: an experimental and theoretical study

Richard R. Wyatt, Mike J. Adams

Optical bistability in active semiconductor devices has attracted considerable interest recently due to the possibility of combining microwatt switching powers with nanosecond switching times. We present experimental and theoretical results of optical bistability in a distributed-feedback (DFB) laser amplifier operating in reflection at 1.5 μm; switch-on delay followed by a sharp transient overshoot is predicted and observed. Minimum switching energies are in the femtojoule region.

Conference on Lasers and Electro-Optics•Jan 1, 1986•4 citations
Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>