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Conference on Lasers and Electro-Optics

Bistable switching and gain recovery dynamics in hybrid III–V/SOI nanolasers

Alexandre Bazin, Yacine Halioua, D. Chastenet, P. Monnier, Isabelle Sagnes, Rama K. Raj, Fabrice Raineri

Published Jan 1, 2012• 0 citations
Publisher

Abstract

We report on optical bistability based on injection locking of hybrid III–V/Silicon-on-Insulator (SOI) nanolaser. Switching power is measured below 40μW. 30ps switching time is deduced from gain recovery time measurement.
DOI
10.1364/cleo_si.2012.ctu2i.2

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The gain characteristics of strained layer InGaAs quantum well laser amplifiers grown on GaAs substrates have been characterized using a Ti-sapphire laser in both CW and self-mode- locked configuration. All-optical bistability was achieved in such a device through the nonlinear refractive index that arises as a result of the gain saturation of the diode amplifier at high optical intensities. The Ti-sapphire laser was modified to produce wavelength tunable pulses of the order of 150 fs with a 15 nm spectral bandwidth in order to measure the dynamics of the gain using a time resolved optical pump-probe technique. The gain saturation occurs on the time scale of the pulse width of the laser and the initial recovery is extremely fast. This initial speedy recovery on a time scale of 100 fs is followed by a slower recovery with a time constant of 3 ps followed by a much slower recovery of 500 ps.