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Physica Scripta

Comparison of switching times in optically bistable injection-locked semiconductor lasers

Marko M. Krstić, Jasna V. Crnjanski, Angelina R. Totovic, Dejan M. Gvozdić

Published Sep 1, 2014• 1 citation
Publisher

Abstract

In this paper, on the basis of the derived analytical model, we analyze switching between stable states of the optically bistable injection-locked semiconductor Fabry–Perot laser. We investigate three different mechanisms of switching: injection power, frequency detuning and bias current variation, and compare switching times obtained for these switching mechanisms.

DOI
10.1088/0031-8949/2014/t162/014036

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The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>

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In this paper, on the basis of the derived analytical model, we analyze switching between stable states of the optically bistable injection-locked semiconductor Fabry–Perot laser. We investigate three different mechanisms of switching: injection power, frequency detuning and bias current variation, and compare switching times obtained for these switching mechanisms.
Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.
In this Letter, we present a detailed theoretical and experimental investigation of optical bistability and tristability in dual injection-locked Fabry-Perot laser diodes. The proposed device can be reconfigured between the bistable and tristable regimes, simply by adjusting the power level of the injected control optical signal. The tristability presented in the experiment is achieved for relatively low optical input powers between 1.03 and 1.25 mW, with the output signal ratio of up to 7 dB between stable states. Such a device is a potential candidate for designing trits, a bit analogy in ternary computational logic.
Abstract—Modifying the rate equations of an injection-locked semiconductor laser, we have analyzed its optical bistability with the effect of frequency chirping of injected light. Comparison between the bistable steady-state characteristics of the laser in two cases: With and without frequency chirping is done by studying the effect of parameters such as frequency detuning, carrier injection rate, and cavity length. Then we have made a comparison between the bistable dynamic characteristics of the laser for these two cases. The results of the analysis show that the effect of frequency chirping on the bistability behavior is negligible. 1.
The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>