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Progress In Electromagnetics Research C

ANALYSIS OF AN INJECTION-LOCKED BISTABLE SEMICONDUCTOR LASER WITH THE FREQUENCY CHIRPING

Mahmoud Aleshams

Published Jan 1, 2009• 1 citation
Publisher

Abstract

Abstract—Modifying the rate equations of an injection-locked semiconductor laser, we have analyzed its optical bistability with the effect of frequency chirping of injected light. Comparison between the bistable steady-state characteristics of the laser in two cases: With and without frequency chirping is done by studying the effect of parameters such as frequency detuning, carrier injection rate, and cavity length. Then we have made a comparison between the bistable dynamic characteristics of the laser for these two cases. The results of the analysis show that the effect of frequency chirping on the bistability behavior is negligible. 1.

DOI
10.2528/pierc09042809

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Abstract—Modifying the rate equations of an injection-locked semiconductor laser, we have analyzed its optical bistability with the effect of frequency chirping of injected light. Comparison between the bistable steady-state characteristics of the laser in two cases: With and without frequency chirping is done by studying the effect of parameters such as frequency detuning, carrier injection rate, and cavity length. Then we have made a comparison between the bistable dynamic characteristics of the laser for these two cases. The results of the analysis show that the effect of frequency chirping on the bistability behavior is negligible. 1.
Optical bistability of a locked-injected laser diode is analyzed when the frequency of injected light varies with the optical power of injected light, (i. e., frequency chirping) by modifying the rate equations. Using the new equations, we have analyzed the effect of external parameters such as frequency detuning, carrier injection rate, and also internal parameters such as cavity length and cavity refractive index on the steady-state output characteristics of the bistable laser diode. The dynamic response of the bistable laser diode with and without frequency chirping were compared.
Dispersive optical bistability in a Fabry-Perot, a distributed feedback (DFB), or a distributed Bragg reflector (DBR), semiconductor laser amplifier has recently attracted much attention, because of its potential in the operation of highly functional optical devices. While the steady-state operation of bistable diode laser amplifiers are well understood, studies of the dynamic properties have been limited to switching time, critical slowing down and output spiking measurements[1-3]. Little attention has been paid to the dynamic frequency chirp which is associated with the turn-on spike at the onset of light injection. Such frequency chirp exists because in dispersive bistability the Fabry-Perot resonance (or the DBR/DFB transmission peak) sweeps through the injected wavelength as a result of alight induced refractive index change. In this paper, we report on a theoretical analysis and the first experimental observation of this dynamic chirp in a Fabry-Perot type nonlinear semiconductor laser amplifier. It is found that the magnitude of the chirp depends on the input power, which in turn is related to critical slowing down.
Optical frequency bistability and power bistability in semiconductor lasers biased from below to above threshold are presented using the unified description of semiconductor lasers with external light injection. A new method is given to calculate the bistable frequency and power loop widths. When the bias current of a laser is fixed, there is a lowest power for the external light to realize optical frequency bistability. And this lowest power reaches its minimum just at threshold. The optical injection level (defined as the ratio of the injected power to the power emitted by the free-running laser) must be larger than a certain value to obtain the bistability. This level may be larger than unity for a laser biased below threshold. On the other hand, for a given bias current, there is a lowest frequency detuning between the electric field of the laser and the injected field to achieve the power bistability. And this detuning must be negative for any bias current (below or above threshold) of the laser. The results are in good agreement with experiments.>