Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Optics Letters

Observation of optical bistability in a GaAlAs semiconductor laser under intermodal injection locking

Yanhua Hong, K.A. Shore

Published Nov 1, 1998• 15 citations
Publisher

Abstract

Experimental observation of optical bistability in a semiconductor laser under intermodal injection locking is reported for what is believed to be the first time. It is seen that a change in injection power of several microwatts or master laser frequency detuning of a few hundred megahertz can induce a change of as much as several hundred gigahertz in the lasing frequency of the slave laser. The results are in qualitative agreement with theoretical predictions.

DOI
10.1364/ol.23.001689

Related papers

Power and frequency dependence ofhysteresis in optically bistable injection-locked VCSELs

Yanhua Hong, Paul S. J. Spencer, K.A. Shore

Optical bistability in an injection-locked vertical cavity surface-emitting semiconductor laser subject to parallel optical injection has been observed. It is shown that the width of the bistability loop may be enhanced by increasing the injection power and the frequency detuning.

Electronics Letters•Apr 26, 2001•17 citations

Switching time in optically bistable injection-locked semiconductor lasers

Dejan M. Gvozdić, Marko M. Krstić, Jasna V. Crnjanski

Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.

Optics Letters•Oct 21, 2011•18 citations

Optical frequency bistability and power bistability in semiconductor lasers

Linlin Li

Optical frequency bistability and power bistability in semiconductor lasers biased from below to above threshold are presented using the unified description of semiconductor lasers with external light injection. A new method is given to calculate the bistable frequency and power loop widths. When the bias current of a laser is fixed, there is a lowest power for the external light to realize optical frequency bistability. And this lowest power reaches its minimum just at threshold. The optical injection level (defined as the ratio of the injected power to the power emitted by the free-running laser) must be larger than a certain value to obtain the bistability. This level may be larger than unity for a laser biased below threshold. On the other hand, for a given bias current, there is a lowest frequency detuning between the electric field of the laser and the injected field to achieve the power bistability. And this detuning must be negative for any bias current (below or above threshold) of the laser. The results are in good agreement with experiments.>

IEEE Journal of Quantum Electronics•Jan 1, 1995•6 citations

Dynamics of optically switched bistable laser diodes in the injection-locked state

Rongqing Hui, A. Paradisi, Sergio Benedetto +1 more

The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.

Optics Letters•Oct 15, 1993•17 citations

Fast optical switching of dispersive bistable laser diodes in the injection-locked regime

Rongqing Hui, A. Paradisi, Sergio Benedetto +1 more

The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>

IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)•Dec 30, 2002•1 citation

ANALYSIS OF AN INJECTION-LOCKED BISTABLE SEMICONDUCTOR LASER WITH THE FREQUENCY CHIRPING

Mahmoud Aleshams

Abstract—Modifying the rate equations of an injection-locked semiconductor laser, we have analyzed its optical bistability with the effect of frequency chirping of injected light. Comparison between the bistable steady-state characteristics of the laser in two cases: With and without frequency chirping is done by studying the effect of parameters such as frequency detuning, carrier injection rate, and cavity length. Then we have made a comparison between the bistable dynamic characteristics of the laser for these two cases. The results of the analysis show that the effect of frequency chirping on the bistability behavior is negligible. 1.

Progress In Electromagnetics Research C•Jan 1, 2009•1 citation
Experimental observation of optical bistability in a semiconductor laser under intermodal injection locking is reported for what is believed to be the first time. It is seen that a change in injection power of several microwatts or master laser frequency detuning of a few hundred megahertz can induce a change of as much as several hundred gigahertz in the lasing frequency of the slave laser. The results are in qualitative agreement with theoretical predictions.
Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.
Optical frequency bistability and power bistability in semiconductor lasers biased from below to above threshold are presented using the unified description of semiconductor lasers with external light injection. A new method is given to calculate the bistable frequency and power loop widths. When the bias current of a laser is fixed, there is a lowest power for the external light to realize optical frequency bistability. And this lowest power reaches its minimum just at threshold. The optical injection level (defined as the ratio of the injected power to the power emitted by the free-running laser) must be larger than a certain value to obtain the bistability. This level may be larger than unity for a laser biased below threshold. On the other hand, for a given bias current, there is a lowest frequency detuning between the electric field of the laser and the injected field to achieve the power bistability. And this detuning must be negative for any bias current (below or above threshold) of the laser. The results are in good agreement with experiments.>
The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>
Abstract—Modifying the rate equations of an injection-locked semiconductor laser, we have analyzed its optical bistability with the effect of frequency chirping of injected light. Comparison between the bistable steady-state characteristics of the laser in two cases: With and without frequency chirping is done by studying the effect of parameters such as frequency detuning, carrier injection rate, and cavity length. Then we have made a comparison between the bistable dynamic characteristics of the laser for these two cases. The results of the analysis show that the effect of frequency chirping on the bistability behavior is negligible. 1.