Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Optics Letters

Switching time in optically bistable injection-locked semiconductor lasers

Dejan M. Gvozdić, Marko M. Krstić, Jasna V. Crnjanski

Published Oct 21, 2011• 18 citations
Publisher

Abstract

Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.

DOI
10.1364/ol.36.004200

Related papers

Comparison of switching times in optically bistable injection-locked semiconductor lasers

Marko M. Krstić, Jasna V. Crnjanski, Angelina R. Totovic +1 more

In this paper, on the basis of the derived analytical model, we analyze switching between stable states of the optically bistable injection-locked semiconductor Fabry–Perot laser. We investigate three different mechanisms of switching: injection power, frequency detuning and bias current variation, and compare switching times obtained for these switching mechanisms.

Physica Scripta•Sep 1, 2014•1 citation

Dynamics of optically switched bistable laser diodes in the injection-locked state

Rongqing Hui, A. Paradisi, Sergio Benedetto +1 more

The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.

Optics Letters•Oct 15, 1993•17 citations

Fast optical switching of dispersive bistable laser diodes in the injection-locked regime

Rongqing Hui, A. Paradisi, Sergio Benedetto +1 more

The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>

IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)•Dec 30, 2002•1 citation

Observation of optical bistability in a GaAlAs semiconductor laser under intermodal injection locking

Yanhua Hong, K.A. Shore

Experimental observation of optical bistability in a semiconductor laser under intermodal injection locking is reported for what is believed to be the first time. It is seen that a change in injection power of several microwatts or master laser frequency detuning of a few hundred megahertz can induce a change of as much as several hundred gigahertz in the lasing frequency of the slave laser. The results are in qualitative agreement with theoretical predictions.

Optics Letters•Nov 1, 1998•15 citations

Power and frequency dependence ofhysteresis in optically bistable injection-locked VCSELs

Yanhua Hong, Paul S. J. Spencer, K.A. Shore

Optical bistability in an injection-locked vertical cavity surface-emitting semiconductor laser subject to parallel optical injection has been observed. It is shown that the width of the bistability loop may be enhanced by increasing the injection power and the frequency detuning.

Electronics Letters•Apr 26, 2001•17 citations

Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Rongqing Hui

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>

Journal of Lightwave Technology•Jan 1, 1995•21 citations
Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.
The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>
Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>