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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Fast optical switching of dispersive bistable laser diodes in the injection-locked regime

Rongqing Hui, A. Paradisi, Sergio Benedetto, Ivo Montrosset

Published Dec 30, 2002• 1 citation
Publisher

Abstract

The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>

DOI
10.1109/leos.1993.379289

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The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>
Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>
Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.
We report the demonstration of cascadability in bistable diode laser amplifiers operated below threshold. A schematic of the experimental set-up is shown in Figure 1. There it is shown that the optical input to the first bistable diode laser amplifier is modulated by a mechanical chopper at frequency Ω1. The output from the first bistable diode laser amplifier is then modulated at Ω2= 2Ω1using a second mechanical chopper. The light is thereafter used as the input to the second bistable device. When the input intensity to the second device is higher than a certain threshold, the output switches. These results are shown in Figure 2. For these experiments, each of the bistable diode laser amplifiers were carefully studied. Detailed bistability measurements at different bias currents and different cavity detuning's were performed. It was found that both the bistability loop and the switching power gets larger as the detuning increases. The size of the hysteresis loop also increased as the laser was operated closer to threshold. In a two beam experiment, it was found that the switching power in the data beam can be as small as 25 nW. Gains larger than 1000 have been demonstrated, indicating the large fan-out capability of these devices. The turn-on and turn-off times in these bistable diode laser amplifiers was measured to be faster than 1 ns and detector limited. These bistable diode laser amplifiers are the most efficient optical devices that have yet been demonstrated and will find applications in photonic switching networks.