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Analysis of Injection-Locking Bistable Laser Diode with Frequency Chirping

Mahmoud Aleshams, M.K. Moravvej, Mohammad Hossein Sheikhi

Published Oct 24, 2006• 1 citation
Publisher

Abstract

Optical bistability of a locked-injected laser diode is analyzed when the frequency of injected light varies with the optical power of injected light, (i. e., frequency chirping) by modifying the rate equations. Using the new equations, we have analyzed the effect of external parameters such as frequency detuning, carrier injection rate, and also internal parameters such as cavity length and cavity refractive index on the steady-state output characteristics of the bistable laser diode. The dynamic response of the bistable laser diode with and without frequency chirping were compared.

DOI
10.1109/ictta.2006.1684725

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Optical bistability of a locked-injected laser diode is analyzed when the frequency of injected light varies with the optical power of injected light, (i. e., frequency chirping) by modifying the rate equations. Using the new equations, we have analyzed the effect of external parameters such as frequency detuning, carrier injection rate, and also internal parameters such as cavity length and cavity refractive index on the steady-state output characteristics of the bistable laser diode. The dynamic response of the bistable laser diode with and without frequency chirping were compared.
Abstract—Modifying the rate equations of an injection-locked semiconductor laser, we have analyzed its optical bistability with the effect of frequency chirping of injected light. Comparison between the bistable steady-state characteristics of the laser in two cases: With and without frequency chirping is done by studying the effect of parameters such as frequency detuning, carrier injection rate, and cavity length. Then we have made a comparison between the bistable dynamic characteristics of the laser for these two cases. The results of the analysis show that the effect of frequency chirping on the bistability behavior is negligible. 1.
Dispersive optical bistability in a Fabry-Perot, a distributed feedback (DFB), or a distributed Bragg reflector (DBR), semiconductor laser amplifier has recently attracted much attention, because of its potential in the operation of highly functional optical devices. While the steady-state operation of bistable diode laser amplifiers are well understood, studies of the dynamic properties have been limited to switching time, critical slowing down and output spiking measurements[1-3]. Little attention has been paid to the dynamic frequency chirp which is associated with the turn-on spike at the onset of light injection. Such frequency chirp exists because in dispersive bistability the Fabry-Perot resonance (or the DBR/DFB transmission peak) sweeps through the injected wavelength as a result of alight induced refractive index change. In this paper, we report on a theoretical analysis and the first experimental observation of this dynamic chirp in a Fabry-Perot type nonlinear semiconductor laser amplifier. It is found that the magnitude of the chirp depends on the input power, which in turn is related to critical slowing down.
In this paper, optical bistability characteristics are demonstrated experimentally based on a dual-mode laser system comprising a multi-mode Fabry-Pérot laser diode (MMFP-LD) and a built-in feedback cavity formed by a fiber facet. The results show that two lasing modes with frequency separation of ∼0.58 THz and comparable peak powers can be achieved by judicious adjustment of the bias current and the operating temperature of the laser chip, which has a peak fluctuation of less than ∼1 dBm over a measurement period of one hour. A combination of appropriate external injection power and wavelength detuning can result in remarkable optical bistability in two oscillation modes, in which the resulting contrast ratio between the unlocked and locked states can be up to 30 dB, and the corresponding hysteresis loop width can be changed by controlling the side-mode injection power and the wavelength detuning.
Optical frequency bistability and power bistability in semiconductor lasers biased from below to above threshold are presented using the unified description of semiconductor lasers with external light injection. A new method is given to calculate the bistable frequency and power loop widths. When the bias current of a laser is fixed, there is a lowest power for the external light to realize optical frequency bistability. And this lowest power reaches its minimum just at threshold. The optical injection level (defined as the ratio of the injected power to the power emitted by the free-running laser) must be larger than a certain value to obtain the bistability. This level may be larger than unity for a laser biased below threshold. On the other hand, for a given bias current, there is a lowest frequency detuning between the electric field of the laser and the injected field to achieve the power bistability. And this detuning must be negative for any bias current (below or above threshold) of the laser. The results are in good agreement with experiments.>